T7H8147504DN Allicdata Electronics
Allicdata Part #:

T7H8147504DN-ND

Manufacturer Part#:

T7H8147504DN

Price: $ 70.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: SCR PHASE CTRL MOD 1400V 750A
More Detail: SCR Module 1.4kV 1180A Single Chassis Mount TO-200...
DataSheet: T7H8147504DN datasheetT7H8147504DN Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
30 +: $ 64.05400
Stock 1000Can Ship Immediately
$ 70.46
Specifications
Series: --
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Structure: Single
Number of SCRs, Diodes: 1 SCR
Voltage - Off State: 1.4kV
Current - On State (It (AV)) (Max): 750A
Current - On State (It (RMS)) (Max): 1180A
Voltage - Gate Trigger (Vgt) (Max): 3V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9600A, 10500A
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200 Variation
Description

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Thyristors - SCRs - Modules include devices such as TRIACs, SCRs, and other Silicon Controlled Rectifiers (SCRs). The designation T7H8147504DN (T7H8147504DN) is a semiconductor device that performs switching operations using a gate electrode. It is generally used when the power requirement is high and is often used in industrial applications.

This part utilizes thyristor technology to control power in various applications. It is used in motor control equipment and switching power supplies, among other uses. By employing a common gate electrode, the device can be triggered and turned on and off, as well as being resistant to transients.

T7H8147504DN includes a diode to prevent current from flowing the wrong way and a fast-acting protective device for any overvoltage situation. Its dual-gate structure also offers the ability to control the device from two points rather than one.

In terms of working principle, the part consists of two semiconductors, P-N and N-P, each in its own housing. A separate gate electrode is connected to each one. When the positive gate is active, the device turns on and current flows through the P-N junction. On the other hand, when the negative gate is active, the device turns off and a reverse-biased P-N junction is formed, preventing current from flowing.

The device is also able to withstand high power levels, making it an ideal choice for high-power applications. It is also able to handle a large number of cycles, allowing it to work in many automated applications. Furthermore, the device offers fast switching compared to other thyristors.

T7H8147504DN offers a variety of advantages over other thyristors, including reliability, cost savings, and flexibility. It is suitable for many industrial applications, such as power control and motor control. Due to its high switching speed, it is particularly well-suited for industrial settings where fast responses are required.

In conclusion, T7H8147504DN is a silicon controlled rectifier (SCR) that utilizes thyristor technology to control power in various applications. It is used in motor control and switching power supplies, and offers a variety of advantages over other thyristors, such as reliability, cost savings, and flexibility. Its two-gate structure offers the ability to control the device from two points rather than one, and its fast switching makes it suitable for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

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