T9S0201803DH Discrete Semiconductor Products |
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Allicdata Part #: | T9S0201803DH-ND |
Manufacturer Part#: |
T9S0201803DH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | THYRISTOR PH CTRL 1800A PUCK |
More Detail: | SCR Module 2kV 3102A Single Chassis Mount TO-200 V... |
DataSheet: | T9S0201803DH Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Structure: | Single |
Number of SCRs, Diodes: | 1 SCR |
Voltage - Off State: | 2kV |
Current - On State (It (AV)) (Max): | 1975A |
Current - On State (It (RMS)) (Max): | 3102A |
Voltage - Gate Trigger (Vgt) (Max): | 3V |
Current - Gate Trigger (Igt) (Max): | 200mA |
Current - Non Rep. Surge 50, 60Hz (Itsm): | 19422A, 20600A |
Operating Temperature: | -20°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | TO-200 Variation |
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Thyristors, SCRs and modules form the three major categories of semiconductor devices used for controlling electrical power. The T9S0201803DH is an SCR module manufactured by Toshiba and is typical of the SCR power modules found in the market. This article briefly examines the application field and working principle of the T9S0201803DH.
Application Field
The T9S0201803DH is an insulated gate bipolar transistor (IGBT). Typical applications for IGBTs are ac drives, dc drives, frequency inverters, switching power supplies, and electrowinning systems. It is suitable for large scale applications due to its high power capability and the fact that it is easy to control. The T9S0201803DH can operate over a wide range of temperatures and has a high switching frequency. Its main components are the main transistor base, main transistor gate, and free wheel diode.
Working Principle
The working principle of the T9S0201803DH is based on the principle of two transistors connected in anti-parallel called the main transistor base and the main transistor gate. The main transistor base is responsible for controlling the current in the circuit, and thus the device acts as a switch. The main transistor gate is responsible for preventing the return current from flowing. The device is triggered by a gate pulse which effectively turns it off. When the device is turned on, the current starts flowing from the anode to the cathode, and the built-in free wheel diode inhibits the reverse current from flowing. This enables the device to provide high-efficiency and high-power performance.
Conclusion
The T9S0201803DH is a versatile SCR module manufactured by Toshiba. It is suitable for large scale applications and has a high switching frequency. Its main components are the main transistor base, main transistor gate and free wheel diode. The working principle of the T9S0201803DH is based on the concept of two transistors connected in anti-parallel, and it is triggered by a gate pulse which effectively turns it off. This enables the device to provide high-efficiency and high-power performance.
The specific data is subject to PDF, and the above content is for reference
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