Allicdata Part #: | TAN250A-ND |
Manufacturer Part#: |
TAN250A |
Price: | $ 198.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 60V 30A 55AW1 |
More Detail: | RF Transistor NPN 60V 30A 960MHz ~ 1.215GHz 575W C... |
DataSheet: | TAN250A Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 180.39300 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Frequency - Transition: | 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 6.2db ~ 7dB |
Power - Max: | 575W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 1A, 5V |
Current - Collector (Ic) (Max): | 30A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55AW |
Supplier Device Package: | 55AW |
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The TAN250A is a high quality silicon NPN transistor that has been specifically designed for use in radio frequency (RF) procedures. It is a self-contained, three-terminal device with a built-in capacitor for shielding or for decoupling. It is also capable of providing good diffusion capacitance to materials in a wide temperature range. Furthermore, this transistor\'s low base impedance and current gain of 20-250Hz make it suitable for RF applications where wide-band response is required.
The TAN250A has two main uses in RF applications. Its purpose as a high gain amplifier stems from its wide band response, low noise characteristics and large current gain of 20-250 Hz. By applying a small signal at its base, a large output signal can be achieved. This extreme current gain is aided by the device\'s low base impedance, which places the gain at a higher level than other transistors. The TAN250A can also be used as a frequency modulator. By adjusting the current through its emitter, the RF signal can be modulated over a wide frequency range.
The working principle of the TAN250A is rooted in its three terminal device design. The emitter terminal injects carriers that are collected by the collector terminal. The base terminal acts as a control point, while the built-in capacitor serves to reduce noise and provide shielding or decoupling. When a small signal is applied to the base, the carriers injected into the collector terminal increase, thus amplifying the output signal. When the current through the emitter is adjusted, the RF signal can be modulated over a wide frequency range.
In conclusion, the TAN250A is an excellent choice for use in RF circuitry. Its positive features such as wide band response, low base impedance, and large current gains make it an ideal component for high gain amplifiers and frequency modulators. Its three terminal device design and built-in capacitor provide excellent shielding, decoupling and noise reduction, making it a very robust component with long-term reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TAN250A | Microsemi Co... | 198.43 $ | 1000 | TRANS RF BIPO 60V 30A 55A... |
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