Allicdata Part #: | TAN350-ND |
Manufacturer Part#: |
TAN350 |
Price: | $ 333.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 1450W 40A 55ST1 |
More Detail: | RF Transistor NPN 65V 40A 960MHz ~ 1.215GHz 1450W ... |
DataSheet: | TAN350 Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 302.95300 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Frequency - Transition: | 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 7dB ~ 7.5dB |
Power - Max: | 1450W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 1A, 5V |
Current - Collector (Ic) (Max): | 40A |
Operating Temperature: | 230°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55ST |
Supplier Device Package: | 55ST |
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TAN350 Application Field and Working Principle
The application field of TAN350 is extensive and can be classified into four major areas, which are RF, microwave, and cellular communication, as well as environmental influence. Among them, the TAN350 offers exceptional performance in the RF application field, which covers frequencies from 0 MHz to 18 GHz. As a general purpose, high voltage, high power, bipolar transistor, the TAN350 has superior performance, superior quality, and superior reliability. This transistor is particularly well suited for high voltage, high power, and high frequency applications, making it the perfect choice for many RF applications.
As an RF transistor, the TAN350 has a wide range of features designed to improve its performance in various applications. One of the features of this transistor is its high gain performance, which is key for use in high frequency applications. Another feature of this transistor is its low switching voltage requirement, which helps reduce power consumption by a considerable amount. It also has a high saturation voltage, making its operation more stable, and is also highly resistant to various environmental influences.
The working principle of the TAN350 is based on the standard bipolar junction transistor, where electrons are injected from the base into the collector to produce the output current. This transistor has a wide base structure with an extremely high inter-electrode capacitance, which provides for an excellent high frequency response. In addition, the TAN350 has a large electrode area that allows for an improved coherent emission, allowing for an improved signal-to-noise ratio and superior power levels.
The TAN350 also offers exceptional protection from environmental influences, such as radiation, dust, and moisture. Its wide area structure and high inter-electrode capacitance ensure better protection from the environment and reduce the effect of radiation on the device. Additionally, the transistor features an Electrostatic Discharge (ESD) protection capability, providing additional protection against high energy discharge voltages.
The TAN350 is an excellent choice for RF applications and provides excellent power, performance, and reliability. It has a wide range of features designed to ensure superior performance in various applications and a working principle that ensures superior performance and power efficiency. The TAN350 is an ideal device for use in high frequency and high power applications, making it the ideal choice for many RF applications.
The specific data is subject to PDF, and the above content is for reference
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