Allicdata Part #: | TAN75A-ND |
Manufacturer Part#: |
TAN75A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 290W 9A 55AZ1 |
More Detail: | RF Transistor NPN 50V 9A 960MHz ~ 1.215GHz 290W Ch... |
DataSheet: | TAN75A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Frequency - Transition: | 960MHz ~ 1.215GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 8dB ~ 8.5dB |
Power - Max: | 290W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 15mA, 5V |
Current - Collector (Ic) (Max): | 9A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55AZ |
Supplier Device Package: | 55AZ |
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The TAN75A is a bipolar junction transistor (BJT) that is designed for use in radio frequency (RF) applications. It has a high frequency performance and excellent power handling. It offers a wide range of gain and impedance control for optimal operation. The TAN75A is commonly used in radio transmitters and receivers, amplifiers, oscillators, antennas, modulators, and multiplexers.
The TAN75A is a NPN transistor. It uses NPN type doping of the three layers, base-emitter-collector. The bipolar junction is formed when the two types of doped silicon are interconnected. The resulting configuration allows for current flow between the collector and the emitter in both forward and reverse directions. This type of transistor is also referred to as a three-terminal device, because it has only three pins (base, emitter, and collector).
In a TAN75A, the collector is the device’s output and the emitter is the device’s input. The base is used to control the current flow between the collector and the emitter. When no voltage is applied to the base, no current is allowed to flow between the collector and emitter; this is referred to as "cut-off". When a voltage is applied to the base, current is allowed to flow between the collector and the emitter. The current flow is dependent upon the amount of voltage applied to the base.
The gain of the TAN75A is controlled by the amount of current that flows between the collector and the emitter. The higher the current, the higher the gain. The gain can be adjusted by varying the voltage applied to the base. In addition, the impedance of the transistor can also be controlled, allowing for optimal performance in different applications.
In radio frequency applications, the TAN75A is usually used as an amplifier, oscillator, or modulator. The transistor can be used to amplify weak signals and to produce high frequency signals. In an oscillator, the transistor is used to produce a continuous output signal, while in a modulator, it is used to change the frequency or amplitude of an input signal. The TAN75A is also used in multiplexers to combine multiple signals into one signal.
The TAN75A is a reliable and versatile transistor that can be used in a wide range of applications. Its high performance and ease of use make it a popular choice for radio frequency applications. With the right circuitry, it can be used to amplify, modulate, and multiplex signals, giving it a wide range of possible applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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TAN75A | Microsemi Co... | 0.0 $ | 1000 | TRANS RF BIPO 290W 9A 55A... |
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