TB100EP Allicdata Electronics
Allicdata Part #:

TB100EP-ND

Manufacturer Part#:

TB100EP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: WeEn Semiconductors
Short Description: TB100/TO-92/STANDARD MARKING *
More Detail: Bipolar (BJT) Transistor NPN 700V 1A 2W Through H...
DataSheet: TB100EP datasheetTB100EP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 700V
Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 750mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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The TB100EP is a single bipolar junction transistor (BJT) that is used in a variety of applications. It is a high power device that is capable of up to 30A DC current and up to 18 kW of RF power. Its capabilities make it ideal for use in automotive, industrial, and military applications.

The TB100EP has a wide array of features that make it suitable for various applications. It is a NPN device with a maximum collector-base breakdown voltage of 250V and an inter-base reverse leakage current of 200 nA. It has a maximum frequency of 500 MHz, an isolation voltage of 1500 V, and a storage temperature range of -40C to +125C. It is also lead-free, RoHS compliant, and AEC-Q101 qualified.

The working principle of the TB100EP is based on the principle of junction conduction. When a small electric current is applied to one side of the junction, it induces current flow on the other side. This is due to the electrons that are able to move through the junction due to the effect of the electric field. This creates a forward bias in the device, which leads to current gain.

The TB100EP is used in a variety of applications, including automotive, industrial, and military. It can be used in device switches, amplifiers, relays, and detection circuits. Its high power capability makes it an ideal choice for power amplifiers and radio frequency (RF) power circuits. It also has low noise and high breakdown voltage, which makes it suitable for use in power management and audio applications.

The TB100EP is also used in motor control and robotics. Its use in motor control circuits is due to its high frequency response, high current gain, and low on-state saturation voltages. This makes it suitable for applications requiring accurate speed control such as robotic arms and vision systems.

The TB100EP can also be used in sensor applications. Its ability to detect small changes in current makes it a suitable choice for detecting temperature, pressure, and vacuum. It also offers a wide linear range of operation, which makes it an ideal choice for detector circuits.

The TB100EP is a versatile device that can be used in a variety of applications. Its wide range of features makes it suitable for automotive, industrial, and military uses. Its high power capabilities, low noise and high breakdown voltage make it an ideal choice for power amplifiers and radio frequency (RF) power circuits. Its ability to detect small changes in current and wide linear range of operation make it suitable for use in sensor and detector circuits.

The specific data is subject to PDF, and the above content is for reference

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