
TB1300H-13-F Circuit Protection |
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Allicdata Part #: | TB1300H-FDITR-ND |
Manufacturer Part#: |
TB1300H-13-F |
Price: | $ 0.32 |
Product Category: | Circuit Protection |
Manufacturer: | Diodes Incorporated |
Short Description: | THYRISTOR PROTECT BIDIR 100A SMB |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 3000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.29106 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Breakover: | 160V |
Voltage - Off State: | 120V |
Voltage - On State: | 3.5V |
Current - Peak Pulse (8/20µs): | 400A |
Current - Peak Pulse (10/1000µs): | 100A |
Current - Hold (Ih): | 150mA |
Number of Elements: | 1 |
Capacitance: | 120pF |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
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Thyristors are electronic devices that provide efficient switch controls in consumer, industrial, and military applications. The TB1300H-13-F, manufactured by Toshiba, belongs to a class of thyristors called SITs, or static induction transistors. It is commonly used in circuits that require the ability to control high-current and high-voltage loads while minimizing losses. This article will discuss the application field and working principle of the TB1300H-13-F.
The TB1300H-13-F is a device with outstanding characteristics for power exchange applications, such as motor-drive, welding power supplies, and UPS. Its high blocking voltage up to 1300V allows it to be used as a main switch for both AC and DC. This SIT offers an outstanding I2t characteristic with an extremely low stored charge, and it is ideal for fast, hard switching applications, and for high frequency operations that would otherwise damage ordinary thyristors. The TB1300H-13-F also has a reduced turn-on time that not only increases efficiency, but also increases the life expectancy of the device.
The working principle of the TB 1300H-13-F is based on the principle of static induction. Upon applying a gate signal current, a potential barrier is created in the SIT body which, when coupled with the junction capacitance, presents a capacitive impedance to the gate. This impedance has the effect of “holding in” the electrons for a certain period of time, allowing the controlled current to remain “on” for a preset period of time. Upon termination of the gate signal, the storage potential barrier disappears and the SIT immediately “turns off”.
The TB1300H-13-F offers several advantages over conventional thyristors. The most prominent advantage is its ability to control large currents without the need for complicated circuitry. In addition, its low gate current requirements, fast switching speeds, and high-temperature stability make it an ideal choice for many power control applications. Due to its low stored charge, the TB1300H-13-F also exhibits excellent immunity to transients and noise.
In conclusion, the TB1300H-13-F is an excellent choice for power control applications. It offers high blocking voltage, fast switching speeds, and high-temperature stability. In addition, its low stored charge provides excellent immunity to transients and noise. With its various features and benefits, the TB 1300H-13-F is an ideal device for many power control and exchange applications.
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