TCK108G,LF Integrated Circuits (ICs) |
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Allicdata Part #: | TCK108GLFTR-ND |
Manufacturer Part#: |
TCK108G,LF |
Price: | $ 0.11 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | IC POWER DIST LOAD SWITCH 4WCSP |
More Detail: | N/A |
DataSheet: | TCK108G,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09765 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Switch Type: | General Purpose |
Number of Outputs: | 1 |
Ratio - Input:Output: | 1:1 |
Output Configuration: | High Side |
Output Type: | P-Channel |
Interface: | On/Off |
Voltage - Load: | 1.1 V ~ 5.5 V |
Voltage - Supply (Vcc/Vdd): | Not Required |
Current - Output (Max): | 1A |
Rds On (Typ): | 49 mOhm |
Input Type: | Non-Inverting |
Features: | Slew Rate Controlled |
Fault Protection: | -- |
Operating Temperature: | -40°C ~ 85°C (TA) |
Package / Case: | 4-UFBGA |
Supplier Device Package: | 4-WCSP (0.79x0.79) |
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TCK108G,LF Application Field and Working Principle
TCK108G,LF is a part of the PMIC (power management integrated circuits) family. It is also classified as a power distribution switches, load drivers. This type of semiconductor is typically used in a wide range of electronics applications, including automotive, communication and consumer electronics.
TCK108G,LF is a digital-output MOSFET switch, which provides precise and reliable control of power. It acts as a low-level switch, controlling the on/off switching of energy between the source and load in a circuit. The maximum current handling capacity is up to 20 A, with a voltage range of 8 V to 18 volts.
TCK108G,LF has some distinguishing features that make it ideal for several applications. Firstly, it is designed to switch loads of up to 20 A, which is a relatively high current rating. Secondly, it is a high-power device and can dissipate up to 200 W, as well as switching up to 1.5 A at a 5 V level. Finally, the input and output are galvanically isolated from each other and the ground plane.
To understand the working principle of TCK108G,LF, one needs to understand the basic structure of the power MOSFET. It is a three-terminal device, with the source, drain, and gate terminals. When the correct voltage is applied to the gate, it will activate the circuit, which enables the current to flow. The device is designed to switch on and off quickly, depending on the required application.
The power transfer efficiency of the TCK108G,LF can be increased by implementing a dead time feature, which allows the device to delay switching off while new signals are processed. This feature reduces the possibility of dropouts or transient voltage spikes from disrupting the flow of energy in the circuit. Additionally, the performance of the TCK108G,LF can be tweaked for specific applications, with the addition of tailored components such as feedback resistors.
In summary, TCK108G,LF is a highly efficient power MOSFET switch, capable of handling up to 20 A of current, with a voltage range of 8 V to 18 volts. It is also equipped with features such as galvanic isolation and dead time control, to increase its power transfer efficiency. As such, this device is an ideal choice for use in automotive, communication and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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