Allicdata Part #: | TCS800-ND |
Manufacturer Part#: |
TCS800 |
Price: | $ 416.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 1944W 50A 55SM1 |
More Detail: | RF Transistor NPN 65V 50A 1.03GHz 1944W Chassis Mo... |
DataSheet: | TCS800 Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 379.06200 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Frequency - Transition: | 1.03GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 8dB ~ 9dB |
Power - Max: | 1944W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5A, 5V |
Current - Collector (Ic) (Max): | 50A |
Operating Temperature: | 230°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55SM |
Supplier Device Package: | 55SM |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TCS800 is a bipolar Junction Transistor (BJT) specifically designed for Radio Frequency (RF) applications. It is a high-current, low to medium-power transistor that operates in the range of 300 to 700 MHz. With a wide range of uses and applications, TCS800 is one of the most versatile BJT transistors available.
Structure
The TCS800 consists of two pieces: a base and an emitter. The base is made up of a semiconductor material, usually silicon, upon which two layers of semiconductor are applied – an n-type layer and a p-type layer. These two layers create a PN junction, which is the active region of the BJT transistor. The base is then connected to the emitter, which is a metallic contact made of a material such as gold or aluminum. The combination of the two pieces makes up the BJT transistor.
Applications
The TCS800 is widely used in a number of RF applications, including amplifier circuits, switching circuits, power converter circuits, and voltage controllers. It is also used as an oscillator in combination with a tuned circuit device, or as a microwave amplifier. As a low- to medium-power device it is suitable for application in a wide variety of circuit applications, such as in wireless communications, automotive electronics, and telecommunications circuitry.
Working Principle
The TCS800 is a three-terminal semiconductor device and operates on the principle of the injection of electrons into and out of the PN junction active region. When a small current is applied to the base terminal, an electric field is created which causes a flow of electrons from the n-type layer to the p-type layer, known as the forward direction of current. This process is known as forward bias. The current injected into the PN junction is then amplified by a small voltage change at the base, allowing for a larger output current at the emitter. This process is known as the emitter\'s amplification factor or gain. The gain of the TCS800 depends on the material used in the semiconductor layer and the spacing between the layers.Attachment of a load across the emitter and collector terminals allows the transistor to switch on and off. In the on condition, the base-emitter voltage is zero, while the collector voltage is equivalent to the total power supply voltage. When the transistor is switched off, the base-emitter voltage increases, resulting in a reduced collector current.
Conclusion
In conclusion, the TCS800 is a high-current, low to medium-power bipolar junction transistor specifically designed for radio frequency applications. It has a wide range of uses and applications, and is one of the most versatile BJT transistors available. Operating on the principle of electron injection and amplification, the TCS800 can be used in amplifier circuits, switching circuits, power converter circuits and much more.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TCS800 | Microsemi Co... | 416.97 $ | 1000 | TRANS RF BIPO 1944W 50A 5... |
TRANS NPN 5GHZ SOT323RF Transistor NPN 1...
TRANS NPN 12V 35MA 5GHZ SOT323RF Transis...
TRANS NPN 20GHZ SOT343FRF Transistor NPN...
TRANS RF NPN LO NOISE SOT-343RF Transist...
TRANSISTOR RF POWER SOT422ARF Transistor...
TRANSISTOR RF POWER SOT422ARF Transistor...