TCS800 Allicdata Electronics
Allicdata Part #:

TCS800-ND

Manufacturer Part#:

TCS800

Price: $ 416.97
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 1944W 50A 55SM1
More Detail: RF Transistor NPN 65V 50A 1.03GHz 1944W Chassis Mo...
DataSheet: TCS800 datasheetTCS800 Datasheet/PDF
Quantity: 1000
25 +: $ 379.06200
Stock 1000Can Ship Immediately
$ 416.97
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz
Noise Figure (dB Typ @ f): --
Gain: 8dB ~ 9dB
Power - Max: 1944W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 50A
Operating Temperature: 230°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55SM
Supplier Device Package: 55SM
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TCS800 is a bipolar Junction Transistor (BJT) specifically designed for Radio Frequency (RF) applications. It is a high-current, low to medium-power transistor that operates in the range of 300 to 700 MHz. With a wide range of uses and applications, TCS800 is one of the most versatile BJT transistors available.

Structure

The TCS800 consists of two pieces: a base and an emitter. The base is made up of a semiconductor material, usually silicon, upon which two layers of semiconductor are applied – an n-type layer and a p-type layer. These two layers create a PN junction, which is the active region of the BJT transistor. The base is then connected to the emitter, which is a metallic contact made of a material such as gold or aluminum. The combination of the two pieces makes up the BJT transistor.

Applications

The TCS800 is widely used in a number of RF applications, including amplifier circuits, switching circuits, power converter circuits, and voltage controllers. It is also used as an oscillator in combination with a tuned circuit device, or as a microwave amplifier. As a low- to medium-power device it is suitable for application in a wide variety of circuit applications, such as in wireless communications, automotive electronics, and telecommunications circuitry.

Working Principle

The TCS800 is a three-terminal semiconductor device and operates on the principle of the injection of electrons into and out of the PN junction active region. When a small current is applied to the base terminal, an electric field is created which causes a flow of electrons from the n-type layer to the p-type layer, known as the forward direction of current. This process is known as forward bias. The current injected into the PN junction is then amplified by a small voltage change at the base, allowing for a larger output current at the emitter. This process is known as the emitter\'s amplification factor or gain. The gain of the TCS800 depends on the material used in the semiconductor layer and the spacing between the layers.Attachment of a load across the emitter and collector terminals allows the transistor to switch on and off. In the on condition, the base-emitter voltage is zero, while the collector voltage is equivalent to the total power supply voltage. When the transistor is switched off, the base-emitter voltage increases, resulting in a reduced collector current.

Conclusion

In conclusion, the TCS800 is a high-current, low to medium-power bipolar junction transistor specifically designed for radio frequency applications. It has a wide range of uses and applications, and is one of the most versatile BJT transistors available. Operating on the principle of electron injection and amplification, the TCS800 can be used in amplifier circuits, switching circuits, power converter circuits and much more.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "TCS8" Included word is 1
Part Number Manufacturer Price Quantity Description
TCS800 Microsemi Co... 416.97 $ 1000 TRANS RF BIPO 1944W 50A 5...
Latest Products
BFR94AW,115

TRANS NPN 5GHZ SOT323RF Transistor NPN 1...

BFR94AW,115 Allicdata Electronics
BFR93AW,135

TRANS NPN 12V 35MA 5GHZ SOT323RF Transis...

BFR93AW,135 Allicdata Electronics
BFU725F,115

TRANS NPN 20GHZ SOT343FRF Transistor NPN...

BFU725F,115 Allicdata Electronics
MBC13900NT1

TRANS RF NPN LO NOISE SOT-343RF Transist...

MBC13900NT1 Allicdata Electronics
BLS3135-65,114

TRANSISTOR RF POWER SOT422ARF Transistor...

BLS3135-65,114 Allicdata Electronics
BLS3135-50,114

TRANSISTOR RF POWER SOT422ARF Transistor...

BLS3135-50,114 Allicdata Electronics