TD180N16KOFHPSA1 Discrete Semiconductor Products

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Thyristors are special semiconductor devices that can be used as switching devices to control or regulate the flow of electricity in electric circuits. Thyristors are constructed using two or more P-N junction elements grown, alloyed, or diffused into a single semiconductor body. A silicon controlled rectifier (SCR) is a device of this type and is a three-terminal switched semiconductor device. It is an abbreviated symbol for “Silicon Controlled Rectifier”, thus making it a type of thyristor. The high power SCR module TD180N16KOFHPSA1 is a combined device of many power SCRs and designed for high current, phase control applications. It is suitable for uses in electric vehicles, AC motor drives and other motor applications.

The TD180N16KOFHPSA1 may be considered as one large load with the ability to turn on or off at one or multiple phases, depending on the application. It consists of two insulated copper plates connected to two collecting bars of copper for connecting rectifier diodes and 6 SCRs. The two copper plates are then connected to a steel plate containing the SCRs. The MOSFET assisted gate drive configuration of the module ensures fast turn-on, reducing the overall power loss in the system, and making it a more reliable switching device.

The module is rated for a voltage of 600 V, current of 180 A, wattage of 28 KW, frequency of 50/60 Hz, and temperature of 125℃. It has been designed to have a low operating time, a low on-state voltage drop, and no snubber circuits. It comes with a voltage surge rating of 6 kV, making it suitable for a wide range of applications.

The typical application field of the module is high power applications such as motor control, power supplies, and electric vehicles. It is also suitable for medium or high power systems, such as induction heating and power converters. Additionally, the module is widely used in switching and rectification applications.

The functioning principle of the TD180N16KOFHPSA1 module is based on the thyristor principle. The module contains a metal oxide semiconductor field effect transistor (MOSFET) which helps to switch the current on or off depending on its gate voltage. It has a gate voltage rating of 5 V and a current rating of 500 mA. When a current is passed through the modules, the MOSFET is triggered on and the thyristors draw current through the MOSFET. This causes a potential to appear across the thyristor which then turns on the semiconductor switch and allows a large current to pass through. When the gate voltage is removed, the MOSFET turns off and the current is cut off.

The TD180N16KOFHPSA1 module is an ideal choice for high power applications, as it is reliable, efficient, and has fast switching times. It is a great choice for applications involving motor control, switching, rectification, and power converters.

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