TE48F4400P0VB00A Allicdata Electronics
Allicdata Part #:

TE48F4400P0VB00A-ND

Manufacturer Part#:

TE48F4400P0VB00A

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512M PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 40...
DataSheet: TE48F4400P0VB00A datasheetTE48F4400P0VB00A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 85ns
Base Part Number: 48F4400P0
Supplier Device Package: 56-TSOP (14x20)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7 V ~ 2 V
Memory Interface: Parallel
Access Time: 85ns
Series: StrataFlash™
Clock Frequency: 40MHz
Memory Size: 512Mb (32M x 16)
Technology: FLASH - NOR
Memory Format: FLASH
Memory Type: Non-Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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Memory is a fundamental concept for computers and any other device used for data processing. Every computer, regardless of its size, has its own collection of memory that works as the brains of the machine. To understand how computers store and process data, one needs to understand the basics of memory.TE48F4400P0VB00A is a dynamic random access memory (DRAM) used in modern personal computers. It is a type of semiconductor RAM that is fast, reliable, and widely available. It was first developed in the late 1970s and has evolved over the years to become one of the most popular types of memory today. This type of memory is now used in a variety of devices, from computers, game consoles, and even smartphones.

The application fields of TE48F4400P0VB00A DRAM are wide. It can be used in many kinds of technology such as personal computers, industrial installations, and embedded systems. It is also used in automotive, communications and aerospace industries. Thanks to its reliable speed and large storage capacity, it is widely used in all sorts of data processing applications.

When it comes to working principles, TE48F4400P0VB00A uses the dynamic RAM architecture. In this system, memory cells are arranged in a hierarchy of memory planes, where each plane contains several columns and rows. Every cell has a capacitor, which stores a small electric charge, and an access transistor. The transistor allows the charge to be accessed when the specific cell is chosen by the processor.

The TE48F4400P0VB00A DRAM also has a memory controller, which is the processor\'s representative in the DRAM. The controller is responsible for scheduling read and write operations, as well as managing the caching, or buffering, of requests from the processor. The controller also includes an address decoder, which maps the address lines from the processor to the physical memory locations. This allows the controller to quickly find the location where read or write operations are to be performed.Finally, the TE48F4400P0VB00A DRAM uses a refresh operation which must be done regularly to refresh the stored data. This refresh action is done by reading the data stored in each memory cell, and then writing it back in the same location. This ensures that the stored data is not lost, as it is possible at high temperatures.

To sum up, TE48F4400P0VB00A DRAM is a popular choice for data processing and storage due to its speed, capacity, and reliability. It is used in a variety of applications, ranging from personal computers to industrial installations and beyond. Its working principles involve a hierarchical memory arrangement with capacitors and transistors, as well as a memory controller for scheduling read and write operations. Lastly, the DRAM also includes a refresh operation which must be done to ensure that the stored data is not lost.

The specific data is subject to PDF, and the above content is for reference

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