TE50B1K0J Allicdata Electronics
Allicdata Part #:

A137861-ND

Manufacturer Part#:

TE50B1K0J

Price: $ 5.61
Product Category:

Resistors

Manufacturer: TE Connectivity Passive Product
Short Description: RES CHAS MNT 1K OHM 5% 50W
More Detail: 1 kOhms ±5% 50W Wirewound Chassis Mount Resistor
DataSheet: TE50B1K0J datasheetTE50B1K0J Datasheet/PDF
Quantity: 1000
1 +: $ 5.10300
10 +: $ 4.63995
25 +: $ 4.17618
50 +: $ 3.59613
100 +: $ 3.30610
250 +: $ 3.13211
500 +: $ 3.01610
1000 +: $ 2.87690
Stock 1000Can Ship Immediately
$ 5.61
Specifications
Operating Temperature: -25°C ~ 225°C
Failure Rate: --
Package / Case: Radial, Tubular
Lead Style: Solder Lugs
Height - Seated (Max): --
Size / Dimension: 1.102" Dia x 4.016" L (28.00mm x 102.00mm)
Mounting Feature: Brackets
Coating, Housing Type: Silicone Coated
Features: Flame Proof, Safety
Series: TE, CGS
Temperature Coefficient: ±440ppm/°C
Composition: Wirewound
Power (Watts): 50W
Tolerance: ±5%
Resistance: 1 kOhms
Part Status: Active
Packaging: Bulk 
Description

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.

Chassis mount resistors refer to those resistors which are designed specifically for chassis mount applications and offer a variety of benefits over other types of resistors. In most cases, these resistors have low self-inductance and low capacitance, which reduces the amount of electrical noise generated within the system, thereby making them suitable for applications that require noise control and suppression. TE50B1K0J is a type of chassis mount resistors and it is widely used in many industries due to its superior capability of controlling and suppressing electrical noise.

Application Field of TE50B1K0J: TE50B1K0J is a high power, high frequency, surface mount insulated-gate bipolar transistor (IGBT) featuring high stability and reliability. The device has a wide range of applications such as telecom, power electronics, power converters, protection systems, automotive, and aviation. It can be used for power supplies, inverters, AC/DC, solar, and home automation. It can also be used for battery charging and discharging and audio-frequency pulse rectifying.

Working Principle of TE50B1K0J: The TE50B1K0J is a high frequency insulated-gate bipolar transistor (IGBT) featuring low on-state resistance, high switching speed, and a high speed gate drive circuit that makes it suitable for use in high speed switching applications. The IGBT has a pair of semiconductor layers, an n-layer and a p-layer, that form a pn-junction. When a voltage is applied across the n-layer and the p-layer, a current will flow through the junction. The switching action of the IGBT is based on the variation of the current flowing through the pn-junction with changes in the voltage applied across the n-layer and the p-layer. As the voltage applied across the n-layer and the p-layer is increased, the current will gradually increase, allowing more electrons to pass through, and the IGBT will turn on. When the voltage is decreased, the current will gradually decrease, and the IGBT will turn off.

The TE50B1K0J is an ideal choice for applications that require a reliable switch with superior switching characteristics. It has a wide operating temperature range and a low thermal resistance, which makes it more efficient. The device also has high input and output voltage ratings, low delay time, and fast switching speed. It is a reliable switch that can be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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