TFSQ0402C0H1C2R4WT Capacitors

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Thin film capacitors are a classification of components used to store electrical energy. In their simplest form, they consist of a thin film of electrical insulation (or dielectric) between two conductors or plates. They are also referred to as “variable capacitors” or “variable capacitance” devices due to the ability to adjust their capacitance value by changing the dielectric material or thickness.

The TFSQ0402C0H1C2R4WT is a thin film capacitor primarily used for noise reduction and signal conditioning applications in the RF and microwave frequency range., specifically in the 500kHz to 4GHz range. The TFSQ0402C0H1C2R4WT is a miniature SMD capacitor with excellent RF performance, providing low ESR, low capacitance variation, high Q and low inductance.

The working principle of a thin film capacitor is based on the establishment of an electric field across a dielectric material. When two conductive/metallic plates face each other and an electric potential is applied, an electric field is generated in the dielectric material. This electric field determines the capacitance of the capacitor. When a voltage is applied between the two terminals, an electric field is established between them and the capacitance of the capacitor will increase or decrease accordingly.

The TFSQ0402C0H1C2R4WT capacitor is an ideal choice for applications where space saving is critical due to its size and power handling capability. It is also suitable for any high-frequency applications where low losses and small size are paramount. Furthermore, the RF performance of this device is superior and it can handle frequencies up to 4GHz, thus making it suitable for a wide range of RF and microwave applications such as communication systems, satellite communication, and military systems.

The TFSQ0402C0H1C2R4WT low-loss characteristics make it ideal for use in distributed matching networks and high-frequency compensation circuits. In addition, its superior electrical performance and low parasitic parameters make it an ideal candidate for VCO, PLL, and other frequency synthesizer circuits. The unit also features a wide capacitance range from 1pF to 200pF, low ESR, and low parasitic parameters to minimize signal distortion, making it ideal for both low and high-frequency signal processing applications.

Overall, the TFSQ0402C0H1C2R4WT is a versatile RF capacitor designed for high-frequency signal processing applications. It provides superior RF performance with low capacitance variation, low ESR and low inductance thus making it suitable for a wide range of signal conditioning and noise reduction applications in the 500 kHz to 4GHz frequency range.

The specific data is subject to PDF, and the above content is for reference