| Allicdata Part #: | TIG111BF-ND |
| Manufacturer Part#: |
TIG111BF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT 600V 23A 2W TO220 |
| More Detail: | IGBT NPT 600V 23A 2W Through Hole TO-220FI(LS) |
| DataSheet: |  TIG111BF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Switching Energy: | -- |
| Supplier Device Package: | TO-220FI(LS) |
| Package / Case: | TO-220-3 Full Pack |
| Mounting Type: | Through Hole |
| Operating Temperature: | -- |
| Test Condition: | 300V, 10A, 30 Ohm, 15V |
| Td (on/off) @ 25°C: | 43ns/175ns |
| Gate Charge: | 63nC |
| Input Type: | Standard |
| Series: | -- |
| Power - Max: | 2W |
| Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 10A |
| Current - Collector Pulsed (Icm): | 92A |
| Current - Collector (Ic) (Max): | 23A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | NPT |
| Part Status: | Obsolete |
| Packaging: | Bulk |
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TIG111BF is a Single Insulated Gate Bipolar Transistor (IGBT). It is a three terminal active device that is used to switch electrical power. It combines the benefits of both MOSFET and bipolar transistor devices. Compared with the IGBTs of other series, the TIG111BF has the advantages of strong driving power, easy switching and low on-state voltage drop. With these features, the TIG111BF can greatly improve the efficiency of power systems.
The TIG111BF semiconductor technology mainly involves the construction of a vertical MOSFET as the upper transistor with an n-half-well and n+ drift region, and a lateral PNP denoted as the lower transistor with an n-drift region. The two transistors are connected in parallel, with their emitter regions commonly connected to the source of the IGBT. This construction allows the TIG111BF to function as a single device.
The TIG111BF has many advantages compared to other IGBTs. It has strong driving power, low on-state voltage drop, and easy switching. With its high frequency capability, high power efficiency and low switching losses, the TIG111BF can save up to 15% more energy compared to other IGBTs. In addition, its extremely low gate-source voltage turn-on threshold makes it easier to operate than other IGBTs. It has a maximum turn-on voltage of 2V and can be used with low gate-source voltage devices.*
The TIG111BF has a variety of applications due to its high frequency capability, high power efficiency and low switching losses. It is suitable for motor control applications such as pulse-width modulation and trapezoid motors; capacitive discharge applications such as welding; and power conversion applications such as AC-DC converters and DC-DC converters. Its low turn-on voltage threshold also makes it suitable for use in low voltage circuits. Due to its robust construction and low on-state voltage drop, it can also be used in snubber circuits and resistive load applications like lighting.
Overall, the TIG111BF offers many benefits. Its strong driving power, low on-state voltage drop, and easy switching make it an ideal choice for a wide range of power applications. Its high frequency capability, high power efficiency and low switching losses provide an efficient and cost-effective solution for many applications. Its low turn-on voltage threshold enables it to be used in low voltage circuits. With its numerous advantages, the TIG111BF is an ideal choice for many applications, including motor control, capacitive discharge, and power conversion.
The specific data is subject to PDF, and the above content is for reference
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