
Allicdata Part #: | 296-46788-ND |
Manufacturer Part#: |
TPD1E10B09-Q1EVM |
Price: | $ 35.62 |
Product Category: | Development Boards, Kits, Programmers |
Manufacturer: | Texas Instruments |
Short Description: | EVALUATION MODULE |
More Detail: | TPD1E10B09-Q1 Transient Voltage Suppression (TVS) ... |
DataSheet: | ![]() |
Quantity: | 9 |
1 +: | $ 32.05440 |
Series: | -- |
Part Status: | Active |
Type: | Circuit Protection |
Function: | Transient Voltage Suppression (TVS) |
Embedded: | -- |
Utilized IC / Part: | TPD1E10B09-Q1 |
Primary Attributes: | -- |
Supplied Contents: | Board(s) |
Secondary Attributes: | -- |
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TPD1E10B09-Q1EVM evaluation and demonstration boards and kits are special-purpose circuit boards and kits that are used to evaluate, test, and demonstrate TI’s TPD1E10B09-Q1 Automotive Technology. This technology features an ultra-low power, high voltage, dual channel N-MOSFET driver that is designed to control secondary side power MOSFETs in a buck, boost, or buck-boost topology. The TPD1E10B09-Q1EVM provides users with a testing platform that demonstrates the device’s complete range of performance and capabilities.
Application Field:
The TPD1E10B09-Q1EVM is well-suited for automotive power management applications. It is specifically designed to provide a high efficiency, low cost solution for DC power management applications such as automobile, battery, and low power off-grid applications. The board can generate multiple output voltages from a single input power source, allow for flexible current sharing, and rapidly adjust to load changes with low output ripple.
Working Principle:
The TPD1E10B09-Q1EVM utilizes a dual-channel high voltage N-MOSFET driver to control secondary side power MOSFETs in a buck, boost, or buck-boost topology. The N-MOSFETs are triggered in parallel from the driver to increase efficiency. With this parallel arrangement, the MOSFETs can simultaneously reduce input voltage with a single operation or increase output voltage when higher power is needed. This driver achieves low power consumption, high power density, and low output ripple by using a constant frequency current mode control.
The board also contains a built-in over-current protection circuit (OCP) to prevent damage from over-current conditions. The OCP circuit monitors the output stage and shuts down the output when over-current is detected. The OCP can be set up to accommodate different output configurations. The board also includes a soft start circuit to slowly ramp up the output voltage, reducing the inrush current for sensitive electronics.
The TPD1E10B09-Q1EVM board is also designed to support both synchronous and asynchronous topologies. An adjustable sync-window circuit allows users to achieve zero core losses by controlling the dead time between the secondary side’s high and low-side FETs. The board also contains an enable circuit to allow users to bypass the FETs to shut down the output.
The board also includes a low-side current sense circuit that allows users to monitor and limit current flow to the load. This circuit is used to keep the output current within a safe range while still providing enough output power to meet the load’s demands. The board also includes a synchronous rectifier circuit that minimizes the conduction losses in the power MOSFETs by eliminating the turn-on delay.
The TPD1E10B09-Q1EVM board is a powerful diagnostic tool for evaluating and testing TI’s TPD1E10B09-Q1 Automotive Technology. It provides users with a testing platform that demonstrates the complete range of performance and capabilities of the technology. By using the board, users can quickly and easily evaluate the technology and develop solutions for a wide range of automotive power management applications.
The specific data is subject to PDF, and the above content is for reference
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