TPR1000 Allicdata Electronics
Allicdata Part #:

TPR1000-ND

Manufacturer Part#:

TPR1000

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 2900W 80A 55KV1
More Detail: RF Transistor NPN 65V 80A 1.09GHz 2900W Chassis Mo...
DataSheet: TPR1000 datasheetTPR1000 Datasheet/PDF
Quantity: 1000
1 +: $ 0.08125
10 +: $ 0.07042
100 +: $ 0.05688
1000 +: $ 0.05417
10000 +: $ 0.05146
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): --
Gain: 6dB
Power - Max: 2900W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 80A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KV
Supplier Device Package: 55KV
Description

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Transistors - Bipolar (BJT) - RF: TPR1000 Application Field and Working Principle

The TPR1000 transistors are a type of bipolar junction transistors (BJT) used in the radio frequency (RF) domain. These transistors are manufactured by GaAs Technology and come in standard SOT-89 and surface mount 3-pin packages, offering a low cost solution for medium-power applications. They operate from 0.5V to 4.0V and can be used in Class A/B and Class C amplifiers. In order to understand the TPR1000 transistors, we will look at their application field, as well as the working principle and features.

Application Fields

The TPR1000 transistors are primarily used in the RF domain. This includes but is not limited to RF power amplifiers, RF oscillators, RF mixers, RF detectors, and FM transmitters. These transistors can also be used in general purpose switching applications. They are designed to operate in the 0.6 GHz-3GHz frequency range with low noise and have a high input impedance.

Features and Working Principle

The TPR1000 transistors offer a wide range of features. They have a large power gain and a small package size, making them suitable for small space applications. The amplifier gain can be adjusted using the gate bias control. The transistor also has an adjustable suppression bandwidth from 0.5MHz-1.0MHz. The transistors are also designed to be highly efficient, dissipating less than 2W of power for 5V operation.

The working principle behind the TPR1000 transistors is fairly simple. They are designed to be operated in Class A/B and Class C amplifier configurations. In Class A/B amplifiers, they are used as a buffer device to amplify the power of the input signal. In Class C amplifiers, they are used to modulate the input signal, producing a modulated output.

Conclusion

The TPR1000 transistors offer a low cost solution for medium-power applications in the RF domain. They are designed to operate in the 0.6GHz-3GHz frequency range and have adjustable gain, suppression bandwidth, and high efficiency. They are suitable for use in power amplifiers, oscillators, mixers, detectors, and FM transmitters as well as general purpose switching applications.

The specific data is subject to PDF, and the above content is for reference

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