TPSC227K006R0100 Capacitors

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TPSC227K006R0100 application field and working principle

Tantalum capacitors are widely used in a variety of systems and gadgets. Comparing to other types of capacitors, they are more efficient, lightweight, and can work stably in a wider range of voltage and temperature. Plus, they also have better dielectric properties and a low equivalent series resistance (ESR).

Mainly used in military, medical and aerospace applications, the TPSC227K006R0100 is a popular solid, surface-mount capacitor that has a voltage rating of 6.3 V and a capacitance range of 1 to 100 μF. It has an extended temperature range, with a standard temperature coefficient of -55 to +125 ˚C and a specialized temperature range of -55 to +150 ˚C.

In terms of construction, Tantalum capacitors are made of a tantalum metal powder core, coated with a dielectric layer. The dielectric layer is either manganite or niobium-oxide. Manganite has a higher capacitance than niobium-oxide, but a lower voltage rating.

The working principle of the TPSC227K006R0100 is quite simple: when electric current is applied to its two electrodes—the anode and the cathode— an electric field develops within its dielectric layer that polarizes it. This polarization attracts the opposite charge from the surrounding area, forming a so-called space-charge layer. This layer eventually blocks or restrains the electric field, resulting in a capacitance that stores energy.

The TPSC227K006R0100 is also full of advantages: it offers excellent volumetric efficiency with quality ratings, a long service life in spite of high ripple current, stability in long term operation and high ESR characteristics, higher working frequency, low leakage current, and excellent environmental characteristics.

All in all, the TPSC227K006R0100 is a great choice for customers seeking a reliable and efficient surface mount capacitor. It is ideal for board-level power-supply applications, communications and computers, as well as its military, medical, and aerospace applications.

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