TPSMB15AHE3/52T

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TVS - Diodes are devices used to protect against high-voltage surges and spikes. The TPSMB15AHE3/52T is a popular device used in many applications. This article will discuss the application field and working principle of the TPSMB15AHE3/52T.

The TPSMB15AHE3/52T is a unidirectional, silicon avalanche diode intended for surface mount applications. The device has a low capacitance of only 0.1pF, so it is ideal for use in high-speed signal applications. The device has a stand-off voltage of 25 to 32V and features a guaranteed breakdown voltage of 100V.

The TPSMB15AHE3/52T can be used in a variety of application fields. The device is suitable for use in the high-speed data line protection of digital and communications systems. It is also often used in consumer electronics, such as computers, wireless telephones, and satellites. Furthermore, the device can be used to protect systems and components from voltage transients generated by lightning and other electrostatic discharge sources.

The working principle of the TPSMB15AHE3/52T is based on the avalanche breakdown effect. The device’s breakdown voltage is determined when electrons travelling through the device gain sufficient energy to ionize molecules in the diode. This ionization creates free electrons and positive holes which then collide to create more current carriers and initiate an avalanche of carriers through the diode. This avalanche effect causes a significant increase in current in the diode and, consequently, a rapid increase in voltage across the diode.

In conclusion, the TPSMB15AHE3/52T is a useful device for protecting systems and components from high-voltage surges and spikes. The device is suitable for use in a wide variety of application fields, such as digital and communications systems, consumer electronics, and lightning protection. The working principle of the device is based on the avalanche breakdown effect. These features make the TPSMB15AHE3/52T a popular device in many applications.

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