Allicdata Part #: | TS200F33CET-ND |
Manufacturer Part#: |
TS200F33CET |
Price: | $ 0.20 |
Product Category: | Crystals, Oscillators, Resonators |
Manufacturer: | CTS-Frequency Controls |
Short Description: | CRYSTAL 20.000000 MHZ |
More Detail: | 20MHz ±30ppm Crystal 20pF 30 Ohms HC-49/US |
DataSheet: | TS200F33CET Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.18018 |
Series: | ATSSMTS |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Type: | MHz Crystal |
Frequency: | 20MHz |
Frequency Stability: | ±30ppm |
Frequency Tolerance: | ±30ppm |
Load Capacitance: | 20pF |
ESR (Equivalent Series Resistance): | 30 Ohms |
Operating Mode: | Fundamental |
Operating Temperature: | -20°C ~ 70°C |
Ratings: | -- |
Mounting Type: | Surface Mount |
Package / Case: | HC-49/US |
Size / Dimension: | 0.437" L x 0.190" W (11.10mm x 4.83mm) |
Height - Seated (Max): | 0.169" (4.30mm) |
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TS200F33CET Application Field and Working Principle
TS200F33CET, more commonly known as a transistor, is a three-terminal semiconductor device. This device is used in a wide array of applications, such as switching, amplification, and voltage regulation. Transistors are composed of three regions; a source region, where current enters the transistor, a drain region, where current exits the transistor, and a channel region between them. By applying a voltage between the gate and source region, the channel can be opened or closed. This, in turn, will determine whether current is allowed to pass through the transistor or not. Transistor’s can also be used to amplify signal, as the current passing through the drain region is proportional to the voltage applied to the gate to source region, thus amplifying the voltage over the drain region.
The TS200F33CET is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) Transistor, which means that a voltage applied to the gate controls the conduction of current between the source and the drain. The construction of the TS200F33CET consists of a silicon chip with a source, drain and gate region. The source and the drain are connected to each other by means of an insulated gate region. When a voltage is applied to the gate, electrons from the gate region flow into the channel and increase the conductivity of the channel, allowing current flow from the source to the drain.
Moreover, the TS200F33CET is a logic level MOSFET, meaning it has a lower gate threshold voltage than a standard MOSFET. This makes it ideal for use in digital circuits, as the gate requires less energy to switch from one state to the other.
Due to its wide range of applications, the TS200F33CET is used in a variety of fields, including automotive, consumer electronics, power management, as well as industrial applications. It is well suited for controlling large currents in relay and switching applications, as well as amplifying audio and video signals. Additionally, it is an ideal choice for switching high voltages, as most modern MOSFETs are capable of operating at high voltages and currents.
To summarise, the TS200F33CET is a highly versatile component, with a wide range of uses in a variety of applications. It can be used for switching, amplification, voltage regulation, and power management. It is also well suited for digital circuits, as it has a lower gate threshold voltage than a standard MOSFET.
The specific data is subject to PDF, and the above content is for reference
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