TSMBJ0312C Allicdata Electronics
Allicdata Part #:

TSMBJ0312CMSTR-ND

Manufacturer Part#:

TSMBJ0312C

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Micro Commercial Co
Short Description: THYRISTOR 160V 150A DO-214AA
More Detail: N/A
DataSheet: TSMBJ0312C datasheetTSMBJ0312C Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
Voltage - Breakover: 220V
Voltage - Off State: 160V
Voltage - On State: 5V
Current - Peak Pulse (8/20µs): 150A
Current - Peak Pulse (10/1000µs): 50A
Current - Hold (Ih): 150mA
Number of Elements: 1
Capacitance: 60pF
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Description

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Thyristors, also referred to as silicon-controlled rectifiers, are semiconductor devices used in a wide range of applications from power control to signal switching. Among the many different types of thyristors, the TSMBJ0312C is a type of UniJunction Transistor (UJT) that provides high-frequency, high-current switches for medium-voltage, medium-current applications.

The unique design of this device makes it ideal for applications such as high switching frequency control of current and voltage. It also has the ability to easily convert energy from one form to another. This makes the TSMBJ0312C an ideal choice for applications in switching and regulation, such as relays, adjustable speed drives, motor control systems, and other high-power control systems.

The TSMBJ0312C is composed of three elements. The first is a n-type base region, where two diodes are connected to each other in series. This base region acts as the “gate” from which a control signal can be applied, allowing the thyristor to be turned on and off. The second element is a p-type emitter region, which is connected to the base region in such a way that when a current is applied, it will flow from the emitter into the base region. The third element is an insulated gate electrode, which is connected to the base region and allows the user to control the voltage and current of the device.

The working principle of the TSMBJ0312C is that when a positive voltage is applied to the gate, it causes an avalanche breakdown in the p-type emitter region, allowing current to flow from the emitter into the base region and then out of the device. This current flow is then regulated by the gate voltage, allowing the user to control the device. The device can also be switched off by cutting off the flow of current.

This device is ideal for applications that require high-frequency, high-current switching of medium-voltage, medium-current midrange applications. It is also useful for applications in which current needs to be converted from DC to AC or vice versa. The TSMBJ0312C is widely used in switching power converters, motor control systems, relays, and adjustable speed drives, as well as in other power control and signal switching applications.

The specific data is subject to PDF, and the above content is for reference

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