TV06B750JB-G Allicdata Electronics

TV06B750JB-G Circuit Protection

Allicdata Part #:

TV06B750JB-G-ND

Manufacturer Part#:

TV06B750JB-G

Price: $ 0.11
Product Category:

Circuit Protection

Manufacturer: Comchip Technology
Short Description: TVS DIODE 75V 121V SMB
More Detail: N/A
DataSheet: TV06B750JB-G datasheetTV06B750JB-G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.09946
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Voltage - Clamping (Max) @ Ipp: 121V
Supplier Device Package: SMB (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: --
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 4.96A
Series: --
Voltage - Breakdown (Min): 83.3V
Voltage - Reverse Standoff (Typ): 75V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS-Diodes are an important type of semiconductor component that is used to provide electrical protection against the transient overvoltage. The TVS-Diodes are designed to absorb and dissipate excessive voltage on a conductor. Common applications include surges, lightning, and other high-frequency electrical events. The TV06B750JB-G is a specific type of TVS-Diode that is designed for transient voltage suppression and has a 10kA 8/20μs surge capability.

The TV06B750JB-G is designed according to the IEC 61000 standard, making it suitable for a variety of applications. It is a bidirectional, low-capacitance diode that offers a low leakage current and a low-clamping voltage of 19 volts. The device is capable of withstanding 6kV of ESD and a 10kA 8/20μs surge capability.

The application field of the TV06B750JB-G includes automotive, consumer electronics, computers, and industrial applications. Most devices in these fields require protection from voltage spikes caused by electrical transients. By using the TV06B750JB-G, an increase in voltage above the diode\'s clamp voltage level can be automatically clamped. This helps to protect sensitive components from physical damage.

The working principle of the TV06B750JB-G is based on the avalanche breakdown principle. This principle states that when the reverse bias voltage is increased, an increase in current will flow across a PN junction. When the voltage reaches a certain level, the current increases rapidly and the electrons in the junction gain sufficient energy to create more electron-hole pairs which avalanche the current flow. This avalanche phenomenon causes the voltage to drop, which is known as the clamping voltage. This clamping voltage reduces the overvoltage to a safe level, protecting the device.

In conclusion, the TV06B750JB-G is a type of TVS-Diode that provides protection against transient overvoltages. It is classified according to the IEC 61000 standard and is suitable for a variety of applications including automotive, consumer electronics, computers, and industrial applications. The device is capable of withstanding 6kV of ESD and a 10kA 8/20μs surge capability. The working principle of the device is based on the avalanche breakdown principle.

The specific data is subject to PDF, and the above content is for reference

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