| Allicdata Part #: | TV06B9V0JB-G-ND |
| Manufacturer Part#: |
TV06B9V0JB-G |
| Price: | $ 0.08 |
| Product Category: | Circuit Protection |
| Manufacturer: | Comchip Technology |
| Short Description: | TVS DIODE 9V 15.4V SMB |
| More Detail: | N/A |
| DataSheet: | TV06B9V0JB-G Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 3000 +: | $ 0.07641 |
| Voltage - Clamping (Max) @ Ipp: | 15.4V |
| Supplier Device Package: | SMB (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -- |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 38.96A |
| Series: | -- |
| Voltage - Breakdown (Min): | 10V |
| Voltage - Reverse Standoff (Typ): | 9V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
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TVS (Transient Voltage Suppressor) diodes are semiconductors used as protection against transient voltage surges. They are used to suppress transient voltage spikes such as electrostatic discharge (ESD) and radio frequency interference (RFI). A TVS diode is typically made up of a silicon junction, and is capable of conducting large currents with low levels of reverse voltage. TV06B9V0JB-G is a particular model of TVS diode designed for applications such as ESD protection and voltage transient protection.
The TV06B9V0JB-G TVS diode is capable of handling high peak currents up to 200A, in addition to ESD protection for up to 25kV, and clamping performance of 16V. This diode is intended for use in automotive, industrial, and wireless equipment applications, specifically for protection against electrostatic discharge and transients. It is rated for Reverse Standoff Voltages (Vr) at 6.2V and Reverse Breakdown Voltages (Vrwm) up to 9V. The peak pulse power rating for this diode is 1kW.
The working principle of the TV06B9V0JB-G diode is based on the concept of avalanche breakdown. When the voltage across the diode exceeds the breakdown voltage, a large amount of current passes through it, resulting in a voltage drop across the diode. This voltage drop helps to limit the voltage surge and dissipates any excess energy. The avalanche breakdown is caused by a number of positive charge carriers (holes) moving towards the negative terminal of the diode. The more holes, the larger the current, which results in a larger voltage drop. The diode also has a low capacitance spread, which makes it suitable for high speed protection applications.
In summary, the TV06B9V0JB-G diode is a versatile TVS device, suited for a wide range of applications. The diode combines high peak current capabilities with ESD protection and low clamping voltages to protect against transient overvoltages. It is also very fast in reacting to transients, due to its low capacitance spread, making it suitable for protection in high speed applications. This diode is intended for applications such as automotive, industrial, and wireless equipment protection against ESD and voltage transients.
The specific data is subject to PDF, and the above content is for reference
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TV06B9V0JB-G Datasheet/PDF