TZMC22-GS08

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TZMC22-GS08 is a diodes-zener single device used to maintain an accurate voltage level throughout a range of current. It is designed to use a semiconductor junction to reduce or eliminate the effects of inductance, noise, and power supply on DC power grids. The device can also be used for voltage steering, signal protection, and signal modulation.

The TZMC22-GS08 is a glass package diode with a maximum breakdown voltage of 22V. It is capable of handling up to 8A continuous current and 8A peak current. A typical forward voltage drop of 0.55V makes the device well suited for low-noise, high-efficiency circuit applications.

The working principle of the TZMC22-GS18 is based on the idea of reverse biasing. It utilizes a reverse-biased N-type PN junction to reduce the forward voltage drop and increase the reverse breakdown voltage. When the diode is forward-biased, an abrupt increase in voltage occurs as the diode gets forward-biased. This is known as the Zener breakdown voltage. The Zener breakdown voltage is a function of the current and temperature. The temperature coefficient of the breakdown voltage is negative, meaning the voltage decreases with increases in temperature.

The TZMC22-GS08 has a dynamic resistance of 0.182 ohms and a capacitance of 5.6 pF. It has a low reverse leakage current of 250 μA. The diode has a power rating of 0.176W, making it suitable for applications with limited power dissipation.

The TZMC22-GS08 is ideal for applications including voltage switching, current-limiting, and voltage regulation. These applications are useful in a variety of applications such as TV sets, computer modems and monitors, power supply decoupling, and pulsed circuits. Its high temperature coefficient and low reverse leakage current make it suitable for amplifiers, OR-ing and diode-OR circuits, and voltage-to-frequency converters.

In summary, the TZMC22-GS08 is a single diodes-zener device designed to provide accurate and low-noise voltage levels in a range of applications. It utilizes a reverse-biased PN junction to reduce the forward voltage drop and increase the breakdown voltage. The device has a power rating of 0.176W, dynamic resistance of 0.182 ohms, and a capacitance of 5.6 pF. It is suitable for applications including voltage switching, current-limiting, and voltage regulation.

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