Allicdata Part #: | U1B-E3/61T-ND |
Manufacturer Part#: |
U1B-E3/61T |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO214AC |
More Detail: | Diode Standard 100V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | U1B-E3/61T Datasheet/PDF |
Quantity: | 1000 |
3600 +: | $ 0.06240 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 920mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 24ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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U1B-E3/61T Application Field and Working Principle
Introduction
The U1B-E3/61T is a single rectifier diode and part of the T Series series of electronic components manufactured by Vishay Intertechnology. This device contains a single Schottky barrier rectifier element, designed for use in variable voltage adjustable power supplies and switched-mode power supplies.Application Field of U1B-E3/61T
The U1B-E3/61T is primarily used for power supply design which requires a low forward-voltage drop when forward-biased. It can be used as an efficient rectifier for power supply bridge circuits, as a surge and transient protection device, and as a voltage reduction element in electronic circuits. It is also suitable for high frequency applications, particularly those that are HF-sensitive.The U1B-E3/61T has a wide range of applications in areas such as power supplies, computers, and other variable electrical equipment. It is particularly suited for high-reliability applications requiring very low forward-voltage drops.Operation of U1B-E3/61T
The U1B-E3/61T uses a schottky barrier rectification principle. When a forward-bias voltage is applied across its anode and cathode, electrons and holes are injected into the depletion region of the junction and recombined. The junction voltage therefore drops and the positive voltage is allowed to pass through the diode. The voltage drop is determined by the diode area and doping profile.When a negative bias voltage is applied, the diode is reverse-biased, no electrons and holes can be injected and the junction voltage increases, thereby blocking any current flow. This prevents damage to both the diode and the application.This device has a maximum reverse voltage rating of 25 V and a forward voltage drop of 1.05 V at a rated current of 1 A. It has a peak reverse recover time of 10 ns, a thermal resistance of 0.7 K/W and a typical turn-on time of 5 µs. It also has an average reverse current of 10 µA.Conclusion
The U1B-E3/61T is a single rectifier diode ideal for power supply design and high frequency applications. It has a low forward-voltage when forward-biased, a peak reverse recover time of 10 ns, a thermal resistance of 0.7 K/W, and an average reverse current of 10 µA. Due to its high reliability and performance, it is a popular component for many power applications.The specific data is subject to PDF, and the above content is for reference
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