UMY1NTR Discrete Semiconductor Products |
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Allicdata Part #: | UMY1NTR-ND |
Manufacturer Part#: |
UMY1NTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN/PNP 50V 0.15A 5UMT |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP (Emitter C... |
DataSheet: | UMY1NTR Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN, PNP (Emitter Coupled) |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 180MHz, 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: | UMT5 |
Base Part Number: | *MY1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A UM9TNTT array is an array of bipolar junction transistors (BJTs) designed for high-current and high-frequency applications.The UM9TNTT array is a type of high-power BJT, with each element designed to deliver up to 5A. Traditional BJTs can become unstable at these high currents and frequencies, so the UM9TNTT has been designed to deliver higher levels of power while still being stable.The main benefits of the UM9TNTT array are its high-current capability, high-frequency response, and high-voltage performance in a relatively small package. This makes it suitable for applications such as power amplifiers, high-frequency voltage regulators, and radio-frequency amplifiers.The UM9TNTT array consists of three N-type MOSFETs (NMOS) in an inverted-L configuration. The NMOS devices are configured in such a way that they can amplify both the voltage and current, allowing the array to operate at higher frequencies and deliver more power.Each NMOS device is optimized for a particular frequency and current level; when working together, they can generate a high-frequency response up to 20MHz. The array also has built-in protection features like a current limit circuit and a thermal shutdown circuit, which help protect the array from damage due to excessive current or temperature.The UM9TNTT array is a versatile and efficient way to provide high-power, high-frequency signals in a small form factor. It is ideal for a wide range of high-power applications, and can be easily integrated into most circuits. The array also offers excellent protection features, which ensure that it can stand up to tough operating environments.The UM9TNTT array is a powerful and reliable way to amplify both voltage and current in high-frequency applications. Its small size makes it suitable for a wide range of uses, and its built-in protection features provide excellent levels of reliability. If you’re looking for a powerful, high-speed amplifier, the UM9TNTT array is a great choice.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...