UNR723100L Discrete Semiconductor Products

UNR723100L transistors are single, pre-biased bipolar junction transistors (BJT). They are widely used in many applications due to their ability to handle high voltages, wide junction temperature range, low leakage current and high current gain. The characteristic of vertical compatibility with UNR and EJT transistors make them suitable for mixed-signal designs.

Description

The UNR723100L is a single, pre-biased NPN bipolar junction transistor (BJT). As its name implies, it is designed to be biased before being put into use, thus making it ready for immediate use. It is fabricated using merged-doped silicon wafers, giving it excellent performance at high voltages. In addition, it has an advanced multi-layer process, allowing it to have a wide junction temperature range and low leakage current.

Features and Benefits

UNR723100L transistors have several key features and benefits. They are ideal for applications with high power ratings, as they can handle voltages up to 100 V and currents up to 800 mA. In addition, their wide junction temperature range allows them to work in extreme temperature conditions up to -55°C to +200°C. Moreover, they offer low leakage current and high current gain, making them suitable for high gain applications. Lastly, their vertical compatibility with UNR and EJT transistors gives designers flexibility to design both analog and digital circuits in the same device.

Applications

Due to their various features and benefits, UNR723100L transistors are well suited for a wide range of applications. They are commonly used in consumer electronics, such as televisions, audio systems, and game consoles. In addition, they are used in automotive electronics and industrial automation applications, such as motor control and robotics. Finally, their wide junction temperature range makes them ideal for aerospace and military applications.

Working Principle

The UNR723100L transistor operates on the principle of a bipolar junction transistor. It has three terminals known as the base, emitter, and collector. The base receives a real-time signal, which is amplified and sent to the emitter. This signal is further amplified within the transistor and then sent to the collector. This amplified signal can then be used to drive higher current and power devices, such as motors and LED strips.

Conclusion

In conclusion, the UNR723100L transistor is a single, pre-biased bipolar junction transistor (BJT). Its excellent performance and wide range of features make it suitable for a variety of high voltage, high temperature, and high gain applications. In addition, its vertical compatibility with UNR and EJT transistors gives designers flexibility to create both analog and digital circuits in the same device.