UP0KG8D00L Allicdata Electronics
Allicdata Part #:

UP0KG8D00LTR-ND

Manufacturer Part#:

UP0KG8D00L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 0.125W SSMINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UP0KG8D00L datasheetUP0KG8D00L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased + Diode
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-665
Supplier Device Package: SSMini5-F2
Description

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Transistors are electrical components that are used to control current or voltage levels, switch electrical signals and some circuits, and are available in various sizes and configurations. The UP0KG8D00L is a high-performance single, pre-biased Bipolar Junction Transistor (BJT) designed for various applications.

A bipolar junction transistor has three terminals—collector, base and emitter. The injected charge carriers, which are holes and electrons from the two junctions, can be used to control current through the transistor, allowing it to be used for various applications. The UP0KG8D00L is designed for single, pre-biased BJT applications, in which the base is connected to the emitter directly, and the collector is biased at a predetermined potential. The UP0KG8D00L is ideal for applications that require low power consumption while ensuring higher levels of reliability and robustness.

One of the main features of the UP0KG8D00L is its high frequency and power performance. The UP0KG8D00L is capable of operating in frequencies up to 2.5GHz, making it suitable for high-speed communication systems. In addition, the UP0KG8D00L offers high power handling, allowing it to be used in a wide range of power applications including amplifiers, low-noise amplifiers, and motor control circuits.

Another beneficial feature offered by the UP0KG8D00L is its low on-resistance. The on-resistance of the UP0KG8D00L is 0.80Ω, which enables the transistor to operate at high currents and voltage levels without compromising reliability. The UP0KG8D00L also features low quiescent current, which helps reduce power consumption while providing superior performance.

The UP0KG8D00L is equipped with a built-in protection circuit to prevent damage from overcurrent and short circuit. The protection circuit also reduces the risk of latch-up and enables the transistor to be used in safety-related applications. The UP0KG8D00L has an operating temperature range of -20°C to 100°C and an operating power supply voltage of 6V to 20V, making it suitable for various applications.

The UP0KG8D00L is designed for applications such as high-speed communication systems, amplifiers, low-noise amplifiers and motor control circuits. It offers excellent power handling ability and low on-resistance, making it suitable for high voltage and current applications. The UP0KG8D00L also features a built-in protection circuit and is available in a variety of packages.

The specific data is subject to PDF, and the above content is for reference

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