UPS115U/TR13

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UPS115U/TR13 is a single, low forward voltage drop, fast recovery rectifier diode from STMicroelectronics. It is manufactured on a STripFET™ II technology in a very-small SMA package which is designed to facilitate the use of high density circuit designs. This diode is particularly suited for miniature, space-saving consumer electronics applications.

An electrical diode is a type of semiconductor device, specifically a two-terminal component that primarily allows the flow of current in one direction. The UPS115U/TR13 is a unidirectional device that snaps rapidly from "off" to "on" with no reverse recovery delay, typically within 50 ns. It offers a reverse leakage current of max 5 μA at 25°C and a low temperature coefficient of 0.5 mV/°C, allowing it to function effectively over a wide range of temperatures and conditions.

The UPS115U/TR13 is available in SMA packages; it has a nominal voltage of 15 V and a maximum forward continuous current of 355 mA at an ambient temperature of 25°C, increasing to 625 mA at a temperature of 90°C. It has a nominal power dissipation of 500 mW. Its operating and storage junction temperature ranges are -65°C to 150°C and -55°C to 150°C, respectively. The device\'s maximum surge non-repetitive current is of 5 A.

Applications of UPS115U/TR13 include high speed switching, voltage clamping, one-way rectification in DC/DC converters, alternate current rectification and filtering, and polarity protection. This type of diode can also be used in UPS power applications and in power supplies, as well as in battery circuit filtering, such as in laptops and other portable electronic devices.

The working principle of the UPS115U/TR13 is based on carriers injection, mobility and velocity of the charge carriers. The characteristics of the device depend on its type of semiconductor material and its doping elements. P-type semiconductor material is formed by diffusing acceptor impurities into an intrinsic (pure) semiconductor material, while the N-type material is formed by introducing donor impurities into an intrinsic semiconductor material.

As the diode is forward biased, electrons from the n-side traverse the p-n junction as a result of their high mobility, while in the same time holes from the p-side are also lost to the n-side. The depletion layer is wider and has a higher potential barrier than when the device is reverse biased, which therefore allows current flow to occur in the forward direction. As it turns off, the device snaps back rapidly as the stored charge within the depletion layer is regaining lost electrons from the n-side or holes from the p-side. The device can then again block the current in the reverse direction.

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