UTP28X7OR-Q

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UTP28X7OR-Q, also called a vertical epitaxial planar PNP transistor, is a type of discrete semiconductor device that utilizes bipolar technology. It is typically used in consumer electronics applications, such as amplifier and television power supplies, as an integrated switch or for amplification. The performance of this type of transistor can be improved significantly by utilizing a suitable heat-sink to efficiently reduce the junction temperature beneficial to further enhance the performance.

The transistor structure of the UTP28X7OR-Q consisting of a heavily doped silicon base and two layers of silicon junctions, one on the base and one on the emitter, which are intended to increase the current flow between the two poles. The technology employed in the UTP28X7OR-Q is vertical epitaxial planar, which is considered advantageous compared to other planar PNP transistors due to its smaller size and higher input and output impedance.

The working principle of the UTP28X7OR-Q is opposite to that of an n-type semiconductor. When the base is positively biased, a small current passes from the emitter to the base resulting in the build-up of electrical charge or electrons. This buildup of charge is known as ponderostatic effect. The current then passes from the base to the collector, which amplifies the signal to a substantial level.

The UTP28X7OR-Q is capable of handling up to 6 amperes of peak collector current with good efficiency. It also provides a good protection from variances in input supply as the transistor maintains a stable bias voltage across the collector in the presence of input supply variation. This type of transistor also has a wide operating temperature range of -65°C to +150°C making it suitable for use in extreme environments.

The most common applications of UTP28X7OR-Q are PNP switching circuits and differential amplifiers. In PNP switching circuits, the device can be used to switch on and off, or provide variable duty cycles. Differential amplifiers are used to amplify the difference between two different signals, and the UTP28X7OR-Q can be used to buffer the common source and to provide gain with low noise and distortion.

In conclusion, the UTP28X7OR-Q is a robust discrete semiconductor device with a wide range of applications in consumer electronics and various other applications. The device has excellent performance characteristics combined with a wide operating temperature range and high current handing capacity which makes it an ideal device for any switching and amplification application.

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