UTV020 Allicdata Electronics
Allicdata Part #:

UTV020-ND

Manufacturer Part#:

UTV020

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 17W 1.2A 55FT-6
More Detail: RF Transistor NPN 25V 1.2A 470MHz ~ 860MHz 17W Cha...
DataSheet: UTV020 datasheetUTV020 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): --
Gain: 12dB
Power - Max: 17W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 250mA, 5V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT
Description

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UTV020, also known as Telefunken UTV020, is a branded transistor from Infineon Technologies. It is a standard medium-power silicon bipolar radio-frequency (RF) transistor available in the TO-220 plastic package. This transistor is often used in RF amplifiers, medium-power switching circuits, output stages, and oscillators. It is suitable for applications where high power dissipation and low-noise performance are important.

The UTV020 device has a single epitaxial base planar construction. It has low-noise and good linearity performance, as well as good complex modulation performance. It has a medium-power range of up to 15W with a collector efficiency up to 85%. It also has a very low reverse transfer capacitance of less than 0.5pF and has high gain-bandwidth product. It offers very good frequency range of up to 500MHz. The UTV020 is capable of withstanding up to 4500V ESD.

The working principle of the UTV020 is based on the operation of the bipolar junction transistor (BJT). The BJT is constructed of three semiconductor layers in which the two semiconductor layers are type-matched to form two junction diodes denoted base-emitter junction diode & base-collector junction diode. The base-emitter junction is forward biased and collector-base junction is reverse-biased. This allows electrons from the emitter to form a base region below it. The base provides the control voltage for the transistor.

The UTV020 is operated in a common-base configuration, meaning the input and outputs are connected at the base terminal. In the common-base configuration, the load impedance is usually low and the gain is fairly large. The base-emitter junction acts as the input and the collector-emitter junction as the output. The collector voltage is varied depending on the input voltage at the base. Therefore, when a voltage is applied at the base terminal, the collector current increases while the emitter current decreases. This produces a destabilization of the transistor and hence an output voltage.

The UTV020 can be used in various applications such as RF amplifiers, oscillators, low-noise preamplifier, multiplier circuit, and switching circuit. It is an excellent choice for medium-power RF applications due to its excellent gain, low-noise performance, and good frequency range. The UTV020 is also suitable for high-speed digital, analog, and power amplifiers. Its excellent linearity and low-noise properties make it a very desirable choice for applications such as signaling systems, military communications, radio communication, and more.

In conclusion, the Telefunken UTV020 is a medium-power silicon bipolar RF transistor. It is ideal for applications where power dissipation and low-noise performance are important. It has excellent linearity and a very good frequency range. The UTV020 is an excellent choice for RF applications, and can be used in medium-power switching circuits, output stages, and oscillators. It is also suitable for high-speed digital, analog, and power amplifiers.

The specific data is subject to PDF, and the above content is for reference

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