Allicdata Part #: | UTV200-ND |
Manufacturer Part#: |
UTV200 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 80W 4.5A 55JV2 |
More Detail: | RF Transistor NPN 28V 4.5A 470MHz ~ 860MHz 80W Cha... |
DataSheet: | UTV200 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 28V |
Frequency - Transition: | 470MHz ~ 860MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 8.5dB ~ 9.5dB |
Power - Max: | 80W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 1A, 5V |
Current - Collector (Ic) (Max): | 4.5A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55JV |
Supplier Device Package: | 55JV |
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The UTV200 is a semiconductor device that is specially designed to amplify the performance of high frequency circuits and the transmission of signals over long distances. It is capable of handling a range of frequencies, making it suitable for a variety of applications. This paper will analyse the application field and working principle of the UTV200.
The UTV200 is a NPN bipolar junction transistor (BJT) that has been designed for use in radio frequency (RF) applications. It has a wide frequency range of up to 8GHz and a number of advantages. The device is designed to provide high DC current gain, low noise and high input impedance, making it ideal for use in RF applications. It is also designed to offer high-frequency stability, reduced flicker noise and increased power output.
The UTV200 is capable of a wide range of applications, including radar, radio, satellite and communications systems. It can also be used for pulse modulation, pulse-amplification, frequency conversion and frequency-shift keyed (FSK) modulation. It is also suitable for use in electronic switching and push-pull amplifiers. Additionally, it can be used as a mixer or transducer, allowing the user to translate different signals into different frequency ranges.
The UTV200 can be used in a variety of different circuits, making it a versatile device. Its easy-to-use design makes it suitable for use in a range of projects and it can be easily integrated into existing systems. Additionally, the device has minimal parasitic capacitance, making it ideal for high-frequency applications.
The working principle of the UTV200 is based on the concept of current amplification. The voltage across the base-emitter junction creates a base current and the number of carriers in the junction creates a current gain. The current gain is determined by the ratio between the base current and the collector current. The UTV200 is designed to be able to handle very high frequencies and has a high current gain. This allows the device to amplify signals that are sent over long distances.
The UTV200 is a versatile device with a wide range of applications and a high degree of performance. It is designed to provide high frequency stability, low noise and high input impedance, making it ideal for use in RF applications. It is also able to handle a wide range of frequencies, making it suitable for many different applications. Finally, its easy-to-use design makes it easy to integrate into existing systems, making it a valuable addition to any project.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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UTV200 | Microsemi Co... | 0.0 $ | 1000 | TRANS RF BIPO 80W 4.5A 55... |
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