V22ZA1PX1347

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The V22ZA1PX1347 is a two-terminal voltage dependent overvoltage protection device made of a silicon semiconductor. It is generally used to guard sensitive semiconductor components from short-term, high voltage and current pulses. The V22ZA1PX1347 is often referred to as an MOV, or Metal Oxide Varistor, and as a Transient Voltage Suppressor.

The V22ZA1PX1347 is designed to handle overvoltage transients that exceed its specified maximum peak pulse current capacity. The device will saturate and dissipate energy in the form of heat during the surge event. The V22ZA1PX1347 is commonly used as a MOV because of its fast response time, low leakage current and relatively high peak pulse power capabilities.

The V22ZA1PX1347 has a number of applications. It is used in a wide range of electronic devices as a voltage protection device. Examples include power supplies, portable electronics, solid-state relay (SSR), and communication systems. The device is also used in automotive, aerospace, industrial and medical applications.

The working principle of the V22ZA1PX1347 is based on the phenomenon of voltage dependent nonlinear conduction of the MOV. Its structure consists of a silicon nucleus with an oxide coating on the surface. When a sudden surge of large voltage and current is applied across the MOV, the oxide coating breaks down and allows current to pass rapidly through the device. The MOV then enters a state of low resistance conduction and, depending on the level of the applied current and voltage, will continue to remain in this state until the voltage or current is reduced.

The V22ZA1PX1347 has a wide operating temperature range and is available in various packages. It is constructed with heat-resistant materials and has a low voltage clamping level of 7 Volts. This device is designed for use in a wide variety of electronic equipment and can provide excellent voltage overvoltage protection.

In conclusion, the V22ZA1PX1347 is a two-terminal voltage dependent overvoltage protection device of a silicon semiconductor. It is generally used to guard sensitive semiconductor components from short-term, high voltage and current pulses, and is commonly used as a MOV because of its fast response time, low leakage current and relatively high peak pulse power capabilities. The device has a number of applications and works on the concept of voltage dependent nonlinear conduction. It is constructed with heat-resistant materials and has a low voltage clamping level of 7 Volts.

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