
Allicdata Part #: | V29GL512P11TAI020-ND |
Manufacturer Part#: |
V29GL512P11TAI020 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (18.4x14) |
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V29GL512P11TAI020 is a type of memory technology which stores data in an organized microchip format. This type of memory technology can be found in many digital devices, from laptops to mobile phones and even digital cameras. Memory technologies are becoming increasingly important for storing and transferring data.
V29GL512P11TAI020 was designed to be a nonvolatile memory device. That means that it is capable of keeping data in memory even with no power applied. It is also capable of high temperature operation up to 185C, making it very popular for use in aerospace applications. This type of memory is often used in applications that require data to be stored and recalled quickly and with a small form factor.
The main application field of V29GL512P11TAI020 is aerospace- and defense-related products, such as navigational and communications systems. Other applications are certain types of scientific instruments, automation devices, and medical imaging systems. This type of memory is also used in automotive and embedded systems, due to its robust and reliable operation.
The working principle of V29GL512P11TAI020 is based on the use of Single-Layer Cell (SLC) flash memory technology. It uses a single layer to construct a memory cell, and is capable of storing one bit of data in each cell. The cell size is small, allowing for higher densities and better performance. Data is written and erased using a process called Fowler-Nordheim tunneling.
The V29GL512P11TAI020 memory is capable of storing up to 16Mb of data, with a clock frequency of up to 200MHz. Data is sequentially written and read at speeds of up to 40Mb/s. The device is also capable of x16 fast burst read, which makes it suitable for high-speed random access applications. The device has built-in error-correction and power backup, providing reliable operation in mission-critical operating conditions.
In summary, V29GL512P11TAI020 is a type of Single-Layer Cell (SLC) flash memory technology which is commonly used in aerospace and defense applications. It is a nonvolatile memory device which stores up to 16Mb of data, and is capable of high temperature operation. It uses the process of Fowler-Nordheim tunneling to write and erase data, and is also capable of x16 fast burst read. It is suitable for applications that require data storage and retrieval in a small form factor, and is ideal for mission-critical conditions.
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