Allicdata Part #: | VDI50-12P1-ND |
Manufacturer Part#: |
VDI50-12P1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOD IGBT BUCK 1200V ECO-PAC2 |
More Detail: | IGBT Module NPT Single 1200V 49A 208W Chassis Moun... |
DataSheet: | VDI50-12P1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 49A |
Power - Max: | 208W |
Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 50A |
Current - Collector Cutoff (Max): | 1.1mA |
Input Capacitance (Cies) @ Vce: | 1.65nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | ECO-PAC2 |
Supplier Device Package: | ECO-PAC2 |
Base Part Number: | VDI |
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Transistors
IGBTs
Modules
The VDI50-12P1 is a 50A Ultrafast IGBT module. It is part of VICOTESL\'s family of IGBTs, which are designed for high-frequency switching and motor control applications. IGBTs are used for switching and controlling power in electronic devices, such as inverters, rectifiers, and amplifiers. The VDI50-12P1 is a power semiconductor module composed of a number of individual IGBTs. This module is an N-channel MOSFET (metal–oxide–semiconductor field-effect transistor) with a built-in fast-recovery anti-parallel diode.
The VDI50-12P1 is used in a wide range of applications, including solar power inverters, motor drives, and uninterruptible power supplies (UPS). It is designed to provide reliable, high-performance switching and control. It is also designed to be vibration and shock resistant, making it ideal for use in harsh environments. The VDI50-12P1 has been tested to operate reliably in temperatures up to 125°C.
Working Principle
An IGBT module is a switching device that operates on a principle called minority carriers. This means that the current flow is created and maintained by a small number of charge carriers, which is different from a MOSFET, where the majority of current is carried by electrons. In an IGBT module, the electrons and holes recombine, causing the voltage to drop quickly, resulting in a fast switching speed. This is why IGBTs are used in applications such as motor drives and other high-frequency switching applications.
The operation of the IGBT module is based on the principle of the transfer of electrons and holes across the channel by thermal force or the application of an electric field. As the electric field increases, the number of electrons and holes created increases, resulting in increased current and voltage. When the voltage difference between the two sides of the IGBT becomes equal to the threshold voltage, the module is switched on. The IGBT module can be switched off by applying a reverse voltage, because the resulting electric field decreases the number of electrons and holes created, thus reducing the current and voltage. The IGBT module can also be switched off by reducing the temperature of the channel, because lower temperatures reduce the thermal forces that create the carriers, thus reducing the current and voltage.
The VICOTESL VDI50-12P1 is designed to provide reliable, high-performance switching and control in a wide range of applications. It is designed to be rugged and reliable, and has been tested to operate in temperatures up to 125°C. It is ideal for use in motor drives and other high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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