Allicdata Part #: | VDI75-12P1-ND |
Manufacturer Part#: |
VDI75-12P1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOD IGBT BUCK 1200V ECO-PAC2 |
More Detail: | IGBT Module NPT Single 1200V 92A 379W Chassis Moun... |
DataSheet: | VDI75-12P1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 92A |
Power - Max: | 379W |
Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 75A |
Current - Collector Cutoff (Max): | 3.7mA |
Input Capacitance (Cies) @ Vce: | 3.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | ECO-PAC2 |
Supplier Device Package: | ECO-PAC2 |
Base Part Number: | VDI |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors – IGBTs – Modules
VDI75-12P1 application field and working principle
The VDI75-12P1 is an Insulated Gate Bipolar Transistor (IGBT) module developed by the renowned VDI Inc in Seoul, Korea for industrial applications. It has a rated current of 75A and a collector-emitter voltage of 1200V.
The module provides a high dielectric strength of 600V, high power dissipation rate of 260W, low output capacitance of 27nF, and low switching losses of 0.75ns. This makes it suitable for high power applications such as converters, inverters, rectifiers, and drives.
The VDI75-12P1 is designed to withstand a wide range of operating temperatures of -20°C to +125°C. In addition, it has a truly isolated design with a built-in high speed IGBT driver for increased safety and reliability. The module is UL recognized for both high temperature of up to 200°C and high current insulation level.
The VDI75-12P1 module is based on a non-punch through (NPT) IGBT which is much faster in switching than conventional punch through (PT) IGBT devices. This higher switching speed reduces the switching losses and increases the power efficiency of the power electronics system.
The IGBT module’s working principle is based on the principle of reverse current flow. When the gate is closed, current flows from the collector to the emitter. When the gate voltage is increased, it inverts the current flow from the emitter to collector. This connection is used to produce an AC or DC output from the IGBT.
The VDI75-12P1 module is widely used in a variety of industrial applications such as inverter drive systems, solar inverters, UPS systems, variable speed drives, and ac/dc converters. It is able to provide high speed switching and high stability for these applications. In addition, it is suitable for applications that require high current density in a small mounting area.
In conclusion, the VDI75-12P1 IGBT module is an ideal choice for those looking for a reliable and efficient solution for industrial applications involving the conversion of high voltage or current. With its high switching speed, high power dissipation rate, and UL certification, the module is able to meet the demands of these applications.
The specific data is subject to PDF, and the above content is for reference
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