
Allicdata Part #: | VID125-12P1-ND |
Manufacturer Part#: |
VID125-12P1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOD IGBT BST/CHOP 1200V ECOPAC2 |
More Detail: | IGBT Module NPT Single 1200V 138A 568W Chassis Mou... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Collector Cutoff (Max): | 5mA |
Base Part Number: | VID |
Supplier Device Package: | ECO-PAC2 |
Package / Case: | ECO-PAC2 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
NTC Thermistor: | Yes |
Input: | Standard |
Input Capacitance (Cies) @ Vce: | 5.5nF @ 25V |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 3.4V @ 15V, 125A |
Power - Max: | 568W |
Current - Collector (Ic) (Max): | 138A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Configuration: | Single |
IGBT Type: | NPT |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
An IGBT module is comprised of an insulated gate bipolar transistor (IGBT) or a fast-switching transistor, which has electrical properties that make it suitable for switching applications. The VID125-12P1 is one of many IGBT modules in which its operation and application fields can be understood clearly.
In order to best understand the VID125-12P1 IGBT module, an understanding of its range of operation is necessary. It operates at a breakdown voltage of 1200 volts, a high-current rating of 9 amps and an on-state voltage of 900 volts. The device provides an high-frequency switching capability and a low gate drive power for efficient operation. Its most significant traits include low power consumption, due to its low gate drive power, and high frequency switching capabilities with fast turn-on.
The VID125-12P1 IGBT Module is ideal for applications such as motor drives and induction heating in the fields of industrial appliances, electric vehicles, renewable energy storage systems and power supply infrastructure.
The working principle behind the VID125-12P1 is intrinsic to its insulation gate design. Specifically, it has two transistors: one p-channel and one n-channel. When a voltage is applied to the gate terminal, the majority charge carriers form an inversion layer, allowing for current to flow from the source to the drain. This makes it possible for it to quickly switch on and off the transistor.
The combination of the p-channel and n-channel transistor is what makes the IGBT module a power device. The p-channel transistor provides a low drop between the source and drain when the voltage applied to the gate terminal is low, while the n-channel transistor provides a low voltage-drop between the source and drain when the voltage applied to the gate terminal is high. This switching dynamic allows for the VID125-12P1 IGBT module to have high frequency switching capabilities and low gate drive power.
The VID125-12P1 is a compact, low-power IGBT module that allows higher power transfer rating and higher frequency switching performance, making it the ideal choice for applications requiring high power and high frequency. By providing a low gate drive power and a high-frequency switching capability, the VID125-12P1 IGBT module can be used in industrial appliances, electric vehicles, renewable energy storage systems and power supply infrastructure.
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