VID50-12P1 Allicdata Electronics
Allicdata Part #:

VID50-12P1-ND

Manufacturer Part#:

VID50-12P1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOD IGBT BST/CHOP 1200V ECOPAC2
More Detail: IGBT Module NPT Single 1200V 49A 208W Chassis Moun...
DataSheet: VID50-12P1 datasheetVID50-12P1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Collector Cutoff (Max): 1.1mA
Base Part Number: VID
Supplier Device Package: ECO-PAC2
Package / Case: ECO-PAC2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 1.65nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Power - Max: 208W
Current - Collector (Ic) (Max): 49A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Single
IGBT Type: NPT
Part Status: Obsolete
Description

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VID50-12P1 is a type of insulated gate bipolar transistor (IGBT) module developed by Infineon Technologies. It is mainly used in power electronics switching applications such as solar inverters, motor drives, power supplies, UPS systems, uninterruptible power supply systems, and telecommunication systems. The IGBT module is designed to provide high reliability and thermal performance in a wide range of power electronic applications. It features a wide operating voltage range of 0.1 to +250Vdc, as well as a high current carrying capability of 50 amps.

The core of the VID50-12P1 is an IGBT, which is a type of transistor that combines the properties of MOS and bipolar transistors. An IGBT comprises of three terminals: the gate, the collector and the emitter. When the voltage applied to the gate is greater than the collector-emitter voltage, the IGBT turns on, allowing current to flow from the collector to the emitter. When the voltage applied to the gate is less than the collector-emitter voltage, the IGBT turns off and the current from the collector to the emitter is blocked.

The VID50-12P1 is a module assembly comprised of two IGBTs, an RC snubber, an NTC thermistor, and a wide variety of gate drive components packaged on a single substrate. The purpose of the NTC thermistor is to provide thermal protection in case of excessive junction temperature. The snubber is included to protect the IGBT against voltage spikes that can be induced by the load. Additionally, the module features a PWR-MOSFET gate driver with a wide range of gate drive options such as adaptive junction-temperature compensation to improve switching performance and mitigate temperature-dependent gate leakage issues.

The VID50-12P1 is designed to operate in a wide range of operating conditions such as light loads and higher input voltage, while offering high efficiency and fast switching speeds. The module can switch at a frequency of up to 20kHz, resulting in reduced switching losses. The main application fields for the VID50-12P1 module include motor drives, UPS systems, solar inverters, power electronics, and power supplies. The high current carrying capability and efficient operation of the module make it suitable for applications such as solar inverters, motor drives, and power supplies.

In conclusion, the VID50-12P1 is a high current carrying IGBT module developed by Infineon Technologies. It combines two IGBTs, an RC snubber, an NTC thermistor, and a wide variety of gate drive components on a single substrate. Its main application fields include motor drives, UPS systems, solar inverters, power electronics, and power supplies. The module can switch at a frequency of up to 20kHz, resulting in reduced switching losses and improved efficiency. It provides reliable performance in a wide range of power electronic applications and can handle input voltages of up to +250Vdc.

The specific data is subject to PDF, and the above content is for reference

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