VID75-06P1 Allicdata Electronics
Allicdata Part #:

VID75-06P1-ND

Manufacturer Part#:

VID75-06P1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOD IGBT BOOST/CHOP 600V ECOPAC2
More Detail: IGBT Module NPT Single 600V 69A 208W Chassis Mount...
DataSheet: VID75-06P1 datasheetVID75-06P1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Collector Cutoff (Max): 800µA
Base Part Number: VID
Supplier Device Package: ECO-PAC2
Package / Case: ECO-PAC2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A
Power - Max: 208W
Current - Collector (Ic) (Max): 69A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Single
IGBT Type: NPT
Part Status: Obsolete
Description

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VI-75-06P1 is a type of insulated-gate bipolar transistor module (IGBT) developed by Eupec and Infineon, designed as a high-performance device offering low power losses and high efficiency. It is a three-phase IGBT bridge version of the standard two-phase type, making it suitable for applications requiring higher current levels and greater efficiency. This article provides an overview of the application field and working principle of the VI-75-06P1 IGBT module.

The VI-75-06P1 module can be used in a range of power electronics applications, including motor drives, power converters, renewable energy systems, inverters, UPS systems, and traction and medical applications. It is particularly well-suited for applications that require high-speed switching and improved efficiency. The IGBT module is also well-suited for use in high-performance motor drives, including aircraft, automotive, and industrial applications.

The VI-75-06P1 module is designed with a three-phase IGBT bridge configuration. The device is equipped with three IGBTs, each configured in a full-bridge package. The bridge is designed in such a way that it can control the current flow between two given points, allowing for bidirectional control of the load connected to the module.

The IGBTs in the module are switching elements that enable the device to handle high levels of power without excessive power losses. The IGBTs are typically driven by a gate drive circuit, which allows the module to be switched on and off quickly and reliably. The gate drive circuit works in conjunction with the control circuit to switch the IGBTs on and off accurately.

The VI-75-06P1 module is designed with a unique high-frequency soft switching technology that helps to reduce audible noise and improve efficiency. This technology works by switching the IGBTs at higher frequencies than traditional IGBTs, allowing for faster switching speeds and reduced losses. As a result, the module is able to achieve higher efficiencies and greater power savings.

In order to deliver the best performance, the VI-75-06P1 module has been designed with a wide range of features. These include a low on-state voltage drop, a wide input voltage range, and a fast switching speed. The combination of these features makes the module suitable for many applications.

The module is also designed with a wide operating temperature range, allowing it to be used in a variety of environments. It also features a tight regulation of the output voltage, ensuring that the output voltage remains stable regardless of the input voltage. Finally, the module is equipped with a robust thermal management system to ensure its reliability in high-temperature conditions.

In conclusion, the VI-75-06P1 module is an advanced insulated gate bipolar transistor module designed to deliver high-performance operation and improved efficiency. It is well-suited for use in a range of power electronics applications and is equipped with a wide range of features to ensure reliable operation in any environment.

The specific data is subject to PDF, and the above content is for reference

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