Allicdata Part #: | VII50-06P1-ND |
Manufacturer Part#: |
VII50-06P1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOD IGBT PHASE LEG 600V ECOPAC2 |
More Detail: | IGBT Module NPT Half Bridge 600V 42.5A 130W Chassi... |
DataSheet: | VII50-06P1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Collector Cutoff (Max): | 600µA |
Base Part Number: | VII |
Supplier Device Package: | ECO-PAC2 |
Package / Case: | ECO-PAC2 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
NTC Thermistor: | Yes |
Input: | Standard |
Input Capacitance (Cies) @ Vce: | 16nF @ 25V |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.9V @ 15V, 50A |
Power - Max: | 130W |
Current - Collector (Ic) (Max): | 42.5A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Configuration: | Half Bridge |
IGBT Type: | NPT |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
VII50-06P1 belongs to a family of insulated gate bipolar transistor (IGBT) modules from Infineon Technologies. It is a 600V device with low switching and conduction losses that enables a high level of system efficiency. The device is suitable for a wide range of applications, including motor control, solar inverters, welding machines, and any other application that requires a reliable and efficient power switch.
Application Field
IGBT modules are commonly used in switchmode to power conversion, which involves higher frequencies, as compared to traditional linear power supplies. The VII50-06P1 is the perfect choice for a variety of high-frequency applications, such as high-power DC-DC converters, power supplies, solar inverters and motor drives. Additionally, the low switching losses are beneficial for pulse-width modulation and light load applications.
Working Principle
The VII50-06P1 is based on the IGBT principle, a type of power semiconductor which combines the two main characteristics of MOSFETs and bipolar transistors. The gate is isolated from the output. Therefore, unlike the conventional power MOSFETs, no gate current is necessary for the turn-on process, making them ideal for high-frequency applications. In addition, the current gain of the device is higher than that of a MOSFET. The combination of a low on resistance and a high current gain enables a high level of output power margin and efficiency.
The VII50-06P1 offers multiple protection features, such as over-temperature protection and overvoltage protection, allowing the module to operate in a variety of scenarios with low risk of catastrophic failure. It is also compliant with internationally accepted safety standards.
The module combines a 600V IGBT and an anti-parallel Freewheeling diode in a thermally enhanced package. The Freewheeling diode return the current during the turn-off period and protects the module from high rest current. In addition, the device is capable of a wide range of operating frequencies and high-temperature operation, making it suitable for a variety of applications.
Conclusion
VII50-06P1 from Infineon is a high-performance, cost-effective and reliable IGBT module. It offers a wide range of protection features and is suitable for a variety of applications, such as motor control, solar inverters and welding applications. Additionally, its low switching and conduction losses make it ideal for high-frequency switchmode power conversions.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
VII50-06P1 | IXYS | 0.0 $ | 1000 | MOD IGBT PHASE LEG 600V E... |
VII50-12P1 | IXYS | 0.0 $ | 1000 | MOD IGBT PHASE LEG 1200V ... |
IGBT MODULE NPT FULL BRIDGE SP6IGBT Modu...
MOD IGBT SIXPACK RBSOA 1200V E1IGBT Modu...
IGBT MOD TRENCH PHASE LEG SP1IGBT Module...
POWER MODULE - IGBTIGBT Module Trench Fi...
PWR MODULEIGBT Module
POWER MOD IGBT 1200V A-IHM130-2IGBT Modu...