VIO160-12P1

Current - Collector Cutoff (Max):	6mA
Base Part Number:	VIO
Supplier Device Package:	ECO-PAC2
Package / Case:	ECO-PAC2
Mounting Type:	Chassis Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
NTC Thermistor:	No
Input:	Standard
Input Capacitance (Cies) @ Vce:	6.5nF @ 25V
Series:	--
Vce(on) (Max) @ Vge, Ic:	3.5V @ 15V, 160A
Power - Max:	694W
Current - Collector (Ic) (Max):	169A
Voltage - Collector Emitter Breakdown (Max):	1200V
Configuration:	Single
IGBT Type:	NPT
Part Status:	Obsolete

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VIO160-12P1 Application Field and Working Principle

The VIO160-12P1 module is a member of the IGBT (Insulated-Gate Bipolar Transistor) family; it has both the pronounced characteristics of MOSFET and BJT (Bipolar Junction Transistor) devices. This module is an IGBT electronic component, making it popular for applications requiring high power wave forms, power conversion, motor control, digital power control, and many other industrial applications.

Application Field

The VIO160-12P1 module is able to handle higher currents and voltages than most other modules, making it suitable for applications in fields like welding, traction, and power rectification. In the case of welding, the VIO160-12P1 is capable of producing an arc with extremely high power. Similarly, its motor control capabilities make it ideal for vehicles requiring high-powered, intermittent driving forces - like those used in the railway industry. Due to its ability to handle high voltages, the VIO160-12P1 is also efficient when used in power rectification, most often in the form of DC to AC (Direct Current to Alternating Current) conversions.

Working Principle

The VIO160-12P1 module is an IGBT component, meaning it’s made up of two typical parts - an N-channel MOSFET and a PNP bipolar junction transistor (BJT). An IGBT component has a low forward voltage drop and a fast turn-off speed due to the bipolar component of its construction. When the VIO160-12P1 is turned on, the N-channel MOSFET acts as the forward switch for positive current and the PNP BJT acts as the forward switch for negative current. The two components are connected by the gate, allowing the MOSFET to interact with the BJT. When the gate voltage rises relatively high, the current flow turns on; when it falls relatively low, the current flow turns off.

Conclusion

Due to its high operational current and voltage, the VIO160-12P1 module is one of the most popular IGBT components on the market today. Its primarily used in welding and traction applications because of its ability to handle high powered wave forms and in power rectification because of its low forward voltage drop and fast turn-off speed. The VIO160-12P1 is especially popular due its construction of an N-channel MOSFET and a PNP BJT, connected by a gate, which together are able to open and close a current flow quickly and efficiently.

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