VKI75-06P1

Series:	--
Part Status:	Active
IGBT Type:	NPT
Configuration:	Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	69A
Power - Max:	208W
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 75A
Current - Collector Cutoff (Max):	800µA
Input Capacitance (Cies) @ Vce:	2.8nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	ECO-PAC2
Supplier Device Package:	ECO-PAC2

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VKI75-06P1 Application Field and Working Principle

Introduction

VKI75-06P1 is an insulated gate bipolar transistor module (IGBT) manufactured by vicor. It is designed to switch high voltage and current such as electric motor and welding applications. It provides a compact solution for use in various industrial and commercial applications while maintaining a high degree of heat dissipation and power handling capability.

Application Field

VKI75-06P1 can be applied in motor control, welding, rectifiers, and other electric motors applications. High-voltage direct current (HVDC) circuit, because of its high electric insulation, is an ideal application for the device. It is also used in switching electric power in a wide range of applications including electric vehicle (EV) charging, AC electric start, and traction inverters.

Features

VKI75-06P1 provides a great deal of features suitable for different applications needs. Firstly, it has a high power handling capability, which can hold up to 500 Amps at 600 Volts. With the improved breakdown voltage, the device provides an increased safety for the systems. It is capable of operating at high switching frequencies, making it suitable for high speed applications. In addition, it has an improved efficiency which is beneficial for overall performance of the system.

Design and Construction

VKI75-06P1 is a module made of interconnecting IGCT chips. An insulated gate bipolar transistor (IGBT) is a type of power transistor that has a gate-insulated emitter and collector, allowing it to handle extremely high voltages and currents without incurring damage. The module consists of four IGBT chip, two fast recovery diodes and one antiparallel diode, all soldered onto a single piece of aluminum heat-sink and enclosed within a plastic housing.

Working Principle

The fundamental working principle of VKI75-06P1 is based on the principle of an insulated gate bipolar transistor (IGBT). This type of transistor allows for a high current flow between the collector and emitter, when a voltage is applied between the gate and the emitter. The gate voltage allows the electrons to flow, which creates a current between the collector and emitter. The external high current is then switched on when the gate is activated. The IGBT module also contains antiparallel diodes, which allow for circuit biasing and provides protection against current surges during the off phase.

Conclusion

VKI75-06P1 is a feature packed IGBT module and an ideal solution for high voltage, high current applications such as welding and electric motor control. It is capable of operating at high switching frequencies with increased safety and improved efficiency and is an ideal choice for electric vehicles, AC electric starts, and traction inverters. The working principle is based on the principle of an insulated gate bipolar transistor, where a high current is allowed to flow between the collector and emitter after a voltage is applied between the gate and the emitter. The antiparallel diodes provide circuit biasing and protection against current surges.

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