VNB49N04TR-E

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VNB49N04TR-E is a high-voltage and high-current MOSFET driver integrated circuit (IC), designed for driving highly capacitive and inductive loads. This power MOSFET driver IC features a wide operating voltage range, making it suitable for both 12V and 24V applications, and is designed for switching mostly small power loads.

The VNB49N04TR-E integrates two current and one voltage channel, providing gate voltage of ±20V and maximum switching current of up to 12A. The chip offers improved gate driver reliability with additional protective features such as under-voltage lockout protection, current limitation protection and active clamping of the drain voltage. It also includes an optimized phase-shifted (PSR) control, which helps to reduce the operating temperature and reduce EMI levels.

The VNB49N04TR-E is an ideal power MOSFET driver for DC-DC converters, motor drives and audio amplifiers. It is suitable for various motor, pump and alternator control systems including in-vehicle electronic, industrial and consumer applications.

The main working principle of the VNB49N04TR-E power MOSFET driver IC is based on the MOSFET gate drive circuit. The integrated circuit consists of two low-side MOSFET drivers and one high-side MOSFET driver circuit with active PFC (power factor correction) control. The low-side MOSFET drivers are responsible for providing the fast gate turn-on of the MOSFET, while the high-side driver is used to enable the MOSFET during the turn-off process. The active PFC circuit ensures that proper drain voltage is applied to the MOSFETs, thereby enabling reliable and efficient power conversion.

The VNB49N04TR-E is also equipped with two separate enable (EN) pins, which provide the user with the flexibility to select either high-side or low-side drive voltage. Depending on the application, one of the enable pins can be used to control the gate voltage of the high-side MOSFET, while the other can be used to control the gate voltage of the low-side MOSFET. Additionally, the device features a pre-enable protection that helps to reduce the power losses in the event of unexpected over-voltage situations.

In summary, the VNB49N04TR-E from Vishay Semiconductor Power MOSFET Driver IC is a highly integrated device designed for driving highly capacitive and inductive loads. It offers a wide operating voltage range, improved gate driver reliability and additional protective features including under-voltage lockout protection and current limiting protection. The device is designed for various motor, pump, alternator and DC-DC converter control systems, and is an ideal solution for in-vehicle electronic, industrial and consumer applications.

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