VNP14N04-E Allicdata Electronics
Allicdata Part #:

VNP14N04-E-ND

Manufacturer Part#:

VNP14N04-E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: MOSFET OMNIFET 42V 14A TO-220
More Detail: N/A
DataSheet: VNP14N04-E datasheetVNP14N04-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Supply (Vcc/Vdd): Not Required
Base Part Number: VN*14N
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Operating Temperature: --
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Features: --
Input Type: Non-Inverting
Rds On (Typ): 70 mOhm (Max)
Current - Output (Max): 10A
Series: OMNIFET™, VIPower™
Voltage - Load: 35V (Max)
Interface: On/Off
Output Type: N-Channel
Output Configuration: Low Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Obsolete
Packaging: Tube 
Description

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Power distribution switches, load drivers, and other components are specially designed to manage the electrical power of a system or device. A great example of a power distribution switch and load driver is the VNP14N04-E, which is a N-Channel MOSFET designed with a high level of integration. This MOSFET can be used in a variety of application areas, and its working principle is quite simple.

The VNP14N04-E is a N-Channel MOSFET specifically designed to improve system performance and reduce space requirements. The N-Channel MOSFET is well-suited for applications that require high switching frequency, such as switching power supplies, LED lighting, and general-purpose amplifiers. This MOSFET is available in a standard 2.5 V and 4 V versions, and provides a high level of on-resistance (RDSON) for good current handling capability. Furthermore, the VNP14N04-E provides a wide operating voltage range (up to 20 V) for efficient operation.

The working principle of the VNP14N04-E MOSFET is based on the fact that it has an internal circuit consisting of two power transistors and one P-channel transistor. When the gate voltage is applied, the two transistors conduct current and the voltage drop across the power transistors causes a current to flow through the P-channel transistor. The P-channel MOSFET then turns "on" and allows current to flow through the drain and source of the MOSFET. This switching action allows the VNP14N04-E to control the electrical power of the system or device that it is connected to, thus providing a way to regulate and manage the power.

In addition to providing power management, the VNP14N04-E MOSFET also adds several other beneficial features. Its P-channel transistor provides a low level of threshold voltage for flexible switching. Furthermore, the VNP14N04-E MOSFET has a low on-resistance (RDSON) which contributes to improved system performance. The MOSFET also has a wide operating temperature range from -55°C to 150°C, making it suitable for most commercial applications. Finally, the integration of the power transistors and P-channel MOSFET into one device, along with its wide operating voltage range, make the VNP14N04-E a great choice for use in high-performance power systems.

The VNP14N04-E is a great example of a power distribution switch and load driver that is suitable for a variety of applications. Its simple working principle, high performance, and low power consumption give it an advantage over other MOSFETs in the same class. The VNP14N04-E is a great choice for those looking to improve system performance or reduce the space requirements of the system.

The specific data is subject to PDF, and the above content is for reference

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