VNQ5E160KTR-E Allicdata Electronics

VNQ5E160KTR-E Integrated Circuits (ICs)

Allicdata Part #:

497-11721-2-ND

Manufacturer Part#:

VNQ5E160KTR-E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC SW M0-5 4CH 10A DGTL PWRSSO24
More Detail: N/A
DataSheet: VNQ5E160KTR-E datasheetVNQ5E160KTR-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Voltage - Supply (Vcc/Vdd): Not Required
Base Part Number: VNQ5E160
Supplier Device Package: PowerSSO-24™
Package / Case: 24-SOP (0.295", 7.50mm Width) Exposed Pad
Operating Temperature: -40°C ~ 150°C (TJ)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Features: Auto Restart
Input Type: Non-Inverting
Rds On (Typ): 160 mOhm (Max)
Current - Output (Max): 7A
Series: VIPower™
Voltage - Load: 4.5 V ~ 28 V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 4
Switch Type: General Purpose
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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VNQ5E160KTR-E is a member of the Power Management Componentsfamily of mixed-signal integrated circuits (ICs) from STMicroelectronics. This family comprises several power distribution switches, load drivers, and power sequencing/monitoring devices, among others, to provide an efficient, reliable, and robust power control system.

VNQ5E160KTR-E belongs to the Power Distribution Switches, Load Drivers category of products. This device can be used for the power supply of portable electronic products, such as smartphones and tablets. VNQ5E160KTR-E integrates a p-channel insulated gatecommutated thyristor (IGCT) with an integrated driver and thermal protection circuitry into a single device. It is designed to provide efficient and optimal On/Off control to power distribution systems on application boards.

The VNQ5E160KTR-E requires a single-ended gate driver and is intended to drive an n-channel MOSFET connected to an inductive and/or resistiveLoad. It is available in an SO8 package and provides a low RDSON, upto 19mΩ. To protect against thermal damage, it has built-in avalanchecurve to avoid an uncontrolled current flow in the circuit. It has discreteFast-on terminals that allow for fast and reliable connectivity.

When the gate driver input is provided to the VNQ5E160KTR-E, it conducts and outputs a low impedance path to the N-Channel MOSFET. The gate driver output is turned off by gate driver input, discontinuous current flow, or by a fault condition.

In addition to providing power control, the VNQ5E160KTR-E offers features such as fault diagnostics, short circuit protection, under-voltage lockout protection, and over-voltage protection. The Fault Diagnostic output of VNQ5E160KTR-E can be used as an interrupt pin to indicate that a fault has occurred. The device also provides built-in over-voltage protection and under-voltage lockout protection to protect against potentially damaging conditions.

VNQ5E160KTR-E is designed to switch power with efficiency without adversely impacting system reliability or stability. It offers a low cost and space-saving alternative where both cost and size are critical. This device provides designers with a high degree of flexibility for their power control applications.

The specific data is subject to PDF, and the above content is for reference

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