VR5EU287218EBW Allicdata Electronics

VR5EU287218EBW Memory Cards, Modules

Allicdata Part #:

VR5EU287218EBW-ND

Manufacturer Part#:

VR5EU287218EBW

Price: $ 36.92
Product Category:

Memory Cards, Modules

Manufacturer: Viking Technology
Short Description: MODULE DDR2 SDRAM 1GB 240-UDIMM
More Detail: Memory Module DDR2 SDRAM 1GB 667MT/s 240-UDIMM
DataSheet: VR5EU287218EBW datasheetVR5EU287218EBW Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
40 +: $ 33.55760
Stock 1000Can Ship Immediately
$ 36.92
Specifications
Series: --
Part Status: Active
Lead Free Status / RoHS Status: --
Memory Type: DDR2 SDRAM
Moisture Sensitivity Level (MSL): --
Memory Size: 1GB
Speed: 667MT/s
Package / Case: 240-UDIMM
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory-Modules: VR5EU287218EBW Application Field and Working Principle

VR5EU287218EBW is a general-purpose memory module for stand-alone computers and is mainly used in industrial and military applications. It can support various operating systems and applications, such as DOS, Windows, Linux, Mac OS, etc. It is compliant with IEEE802.3 specification and complies with ANSI TIA/EIA-422-B standard.

The maximum capacity of the VR5EU287218EBW module is 8 GB. The power consumption is low, with a voltage of 3.3 V and a current of 6 A. It has good stability and is highly reliable. The module also has a wide range of operating temperatures, ranging from -40°C to +85°C.

The working principle of the VR5EU287218EBW module is based on the idea of NAND flash. This is the same technology used in other types of RAM chips, such as SDRAM and DDR. The essential components of the memory module are the control logic and the memory cells. The control logic is responsible for managing and controlling the data flow, while the memory cells store and retrieve information.

The memory cells are organized in columns and rows. Each memory cell consists of a NAND gate and two transistors. The NAND gate is used to control the data flow from the memory cells to the output bus. The two transistors are used to store and retrieve data from the memory cells. The memory cells are organized into a grid pattern, allowing for the maximum speed and capacity.

The VR5EU287218EBW has a high-speed serial interface, which allows for data transfers at speeds up to 6.6 Gbps. The module is also compliant with the SSD protocol, allowing for fast and efficient data storage. Additionally, the module has low power consumption and is highly reliable. It is ideal for computers and other systems that require large amounts of data storage.

The specific data is subject to PDF, and the above content is for reference

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