VRE505KS

Noise - 0.1Hz to 10Hz:	3µVp-p
Base Part Number:	VRE505
Supplier Device Package:	8-SMT
Package / Case:	8-SMD
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Current - Supply:	7mA
Voltage - Input:	13.5 V ~ 22 V
Noise - 10Hz to 10kHz:	--
Series:	--
Temperature Coefficient:	2ppm/°C
Tolerance:	±0.02%
Current - Output:	10mA
Voltage - Output (Min/Fixed):	5V
Output Type:	Fixed
Reference Type:	Series
Part Status:	Obsolete
Packaging:	Tube

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Introduction

VRE505KS is a highly accurate, low power-consumption voltage reference (VR) device which can be utilized in applications where extreme accuracy is required. This article will discuss the application field and working principle of the VRE505KS.

Application Field

The VRE505KS is an interchangeable voltage reference device and can be used in a variety of applications. It is the ideal component for regulator and sensor systems requiring high accuracy and low power consumption, such as precision motor controllers, A/D and D/A converters, battery voltage monitors, etc.To take advantage of its wide range of applications, the VRE505KS is made of several elements, such as an ultra-accurate reference voltage source, a temperature compensation circuit, and a hetero-junction bipolar transistor (HBT). These all work in conjunction to provide precision and accuracy in any environment. Each component works together to help the device remain amazingly accurate. Moreover, the VRE505KS is ideal for environments exposed to extreme temperatures due to its temperature coefficient of 0.1ppm/C. This allows it to remain highly accurate even in temperatures as high as 150-degrees Celsius. The device has an extremely low power consumption of only 1.5mW, making it an ideal choice for low power applications.

Working Principle

The VRE505KS works by utilizing a combination of its subcomponents. The device’s basic design relies on the HBT, which is used as a voltage reference. This HBT is comprised of a PN layer and a junction layer. The PN layer is responsible for boosting and regulating the voltage while the junction layer works to provide the ground reference. The VRE505KS also utilizes a bandgap voltage reference circuit, which generates a stable reference voltage and is adjustable with a voltage divider. This allows the VRE505KS to remain extremely accurate throughout any temperature range. Additionally, the device utilizes a temperature compensation circuit. This circuit works to keep the output voltage within a consistent range and is able to work together with the HBTs and the bandgap circuit. This ensures that the VRE505KS remains highly accurate. Finally, the VRE505KS is also equipped with CMOS logic-level NAND gate logic. This logic allows for easy switching and circuit integration, giving the device tremendous flexibility.

Conclusion

The VRE505KS is an excellent choice for applications that require extreme accuracy and low power consumption. The combination of its PN layer, junction layer, bandgap voltage reference, temperature compensation circuit, and CMOS logic-level NAND gate enables the device to remain accurate in any environment. Its temperature coefficient of only 0.1ppm/C allows it to remain highly accurate in temperatures up to 150-degree Celsius, while its low power consumption of 1.5mW makes it an ideal choice for low power applications.

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