
VS-10BQ040TRPBF Discrete Semiconductor Products |
|
Allicdata Part #: | 10BQ040PBFTR-ND |
Manufacturer Part#: |
VS-10BQ040TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 40V 1A SMB |
More Detail: | Diode Schottky 40V 1A Surface Mount SMB |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 530mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 40V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | 10BQ040 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
VS-10BQ040TRPBF is a single phase, high current rectifier with a Schottky Barrier Diode (SBD) structure. It is used in applications such as DC/DC converters, lighting, industrial motor control, and general medium to high frequency rectifying circuits. It features a very low forward voltage drop and a fast recovery time of less than 1 ns.
The VS-10BQ040TRPBF is available in a 50V, 40A package. It is designed for medium to high frequency switch mode power supplies and other applications that are very sensitive to forward voltage drop and reverse recovery time. The SBD structure ensures that the forward voltage drop remains low, which reduces power dissipation in the VS-10BQ040TRPBF. The fast recovery time minimizes switching losses and increases the circuit efficiency.
The VS-10BQ040TRPBF works by converting alternating current (AC) to direct current (DC). In its more basic form, the diode is composed of a PN junction that allows electric current to flow in only one direction. The PN junction is created when two different semiconductor materials, one with a negative or n-type charge and the other with a positive or p-type charge, are joined together.
When the diode is forward biased, that is, when the anode is connected to a positive voltage and the cathode is connected to a negative voltage, current will flow. For the VS-10BQ040TRPBF, the anode is connected to a positive voltage and the cathode is connected to ground. The current flowing through the diode is passed through a series of switches, or MOSFETs, which then direct the current to the appropriate load. When the voltage across the diode becomes negative, the diode is reverse biased, preventing electric current from passing through. The VS-10BQ040TRPBF is designed with a fast recovery time, which enables it to switch quickly between reverse and forward bias.
The VS-10BQ040TRPBF is an ideal choice for high current applications. Its low forward voltage drop reduces power dissipation and its fast recovery time maximizes circuit efficiency. It is a versatile device that can be used in a variety of applications, such as DC/DC converters, lighting, motor controls, and medium to high frequency rectifying circuits.
The specific data is subject to PDF, and the above content is for reference
Diodes - General Purpose, Power, Switchi...

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

DIODE GEN PURPOSE DO-204ALDiode

DIODE GEN PURP 400V 1A DO41Diode Standar...

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

DIODE GEN PURP 400V 500MA D5ADiode Stand...
