VS-10BQ060TRPBF Allicdata Electronics

VS-10BQ060TRPBF Discrete Semiconductor Products

Allicdata Part #:

10BQ060PBFTR-ND

Manufacturer Part#:

VS-10BQ060TRPBF

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 60V 1A SMB
More Detail: Diode Schottky 60V 1A Surface Mount SMB
DataSheet: VS-10BQ060TRPBF datasheetVS-10BQ060TRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.54167
10 +: $ 0.46944
100 +: $ 0.37917
1000 +: $ 0.36111
10000 +: $ 0.34306
Stock 1000Can Ship Immediately
$ 0.54
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: 10BQ060
Description

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VS-10BQ060TRPBF Application Field and Working Principle

Diodes – Rectifiers – Single includes a wide variety of diodes and rectifiers. VS-10BQ060TRPBF is one of the single rectifier products under this classification.

VS-10BQ060TRPBF is an ultra fast recovery diode featuring a low maximum forward voltage drop of only 0.6V, allowing for more efficient use of power. It is designed for use in a variety of applications including automotive, lighting, industrial, and telecom. Its qualities make it an ideal choice for high-efficiency applications.

This device is designed for die attach on an FR4 epoxy board, as well as an alumina substrate. It can be used in high speed switching applications and has a junction-to-ambient thermal resistance of 30°C/W (max) and a reverse leakage current of 5mA (max).

VS-10BQ060TRPBF utilizes the working principle of the PN junction diode. It operates by having current flow in the forward direction, while blocking, or rectifying, the current in the opposite direction. When forward biased, electrons, which are negatively charged, are attracted to the positively charged holes, allowing current to flow in the forward direction. Then, when in reverse bias, the depletion layer, or an electric field created by the negatively charged electrons and positively charged holes, stops current from flowing in the reverse direction.

VS-10BQ060TRPBF has a die attach temperature of 140°C, a surge overload rating of 1.2A, a peak pulse current of 4.0A, and a peak non-repetitive reverse voltage of 600V. The device also has a maximum forward voltage drop of 0.6V, as well as a reverse recovery time of 20ns (typ). Due to its low forward voltage drop, varied applications, and fast recovery times, VS-10BQ060TRPBF is a great choice for the design of automotive, lighting, industrial and telecom systems.

The specific data is subject to PDF, and the above content is for reference

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