| Allicdata Part #: | VS-10BQ100HM3/5BT-ND |
| Manufacturer Part#: |
VS-10BQ100HM3/5BT |
| Price: | $ 0.10 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE SCHOTTKY 100V 1A DO214AA |
| More Detail: | Diode Schottky 100V 1A Surface Mount DO-214AA (SMB... |
| DataSheet: |  VS-10BQ100HM3/5BT Datasheet/PDF |
| Quantity: | 1000 |
| 3200 +: | $ 0.08928 |
Specifications
| Series: | Automotive, AEC-Q101 |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 750mV @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 500µA @ 100V |
| Capacitance @ Vr, F: | 65pF @ 5V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
| Supplier Device Package: | DO-214AA (SMB) |
| Operating Temperature - Junction: | -55°C ~ 175°C |
Description
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VS-10BQ100HM3/5BT diodes are specialized rectifiers used to condition electrical energy, converting alternating current (AC) to direct current (DC). They are made up of two p-type semiconductor layers on opposite sides of an n-type substrate, allowing for the efficient transmission of electric power for a range of industrial, automotive and consumer applications. This article will provide an overview of the device’s capabilities, as well as a look at its design and working principles.
The VS-10BQ100HM3/5BT diode is a single run, or full-wave rectifier, which acts as a holding device to store energy during the positive half of the alternating current. This allows the input power to continuously flow through the circuit, creating a steady DC output. It has a maximum reverse current rating of 70μA and can be connected in series or parallel to meet a range of requirements. The device also includes a low-power standby state for reduced current demands and improved efficiency. This type of diode is most commonly used for low-frequency rectification, including both switch-mode and linear power supplies.
The diode is composed of a single-layer epitaxial semiconductor substrate which provides electrical isolation, a p-type doping layer, and an n-type doping layer. The doping layer is necessary to provide the desired electrical conductivity characteristics. The epitaxial substrate provides structure to the device and allows the p-type and n-type layers to remain separated. The two layers form a junction between the positive and negative poles of the diode, which allow current to flow in a single direction. This prevents the high-frequency spikes that often occur in circuit designs.
In operation, the diode follows a simple 2-step process. First, electric power is applied to the input to anode, creating a electric potential across the junction. This allows electric current to flow from the anode to the cathode, via the n-type layer. The current is then rectified (filtered and inverted) to produce a valid, DC voltage at the output. This process is known as full-wave rectification and occurs with every continuous cycle of input current.
The VS-10BQ100HM3/5BT diode has a variety of use cases, including power supply design, voltage regulation, and protection. In addition, it can be used as an energy storage and rectification device in a variety of lighting, motor, and industrial applications. The device is designed to withstand a maximum temperature of 125 degrees Celsius, and a maximum continuous current of 6 A and 10A surge, making it an ideal choice for motors and appliances that require high input current.
The VS-10BQ100HM3/5BT diode is a powerful, reliable, and widely accepted rectification option. By combining a single-layer epitaxial substrate, p-type doping layer, and n-type doping layer, the device is capable of quickly and efficiently converting AC to DC power. Additionally, its low-power standby state allows for improved efficiency and reduced energy consumption. With its wide range of applications, this diode is an excellent choice for a variety of power conditioning tasks.
The specific data is subject to PDF, and the above content is for reference
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