VS-10ETF02-M3 Allicdata Electronics
Allicdata Part #:

VS-10ETF02-M3-ND

Manufacturer Part#:

VS-10ETF02-M3

Price: $ 1.45
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 200V 10A TO220AC
More Detail: Diode Standard 200V 10A Through Hole TO-220AC
DataSheet: VS-10ETF02-M3 datasheetVS-10ETF02-M3 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.30506
Stock 1000Can Ship Immediately
$ 1.45
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Description

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VS-10ETF02-M3 is a kind of single rectifier diode designed for applications such as DC, pulsed, power rectifying, and active rectifying, featuring low reverse leakage current, high forward voltage and high voltage capability, and low reverse recovery time. It is suitable for various applications including power supplies, power converters, point-of-load converters and surge protection systems.

The structure of the VS-10ETF02-M3 diode consists of an aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), and gallium arsenide (GaAs) junction along with a silicon planar cap. This helps ensure that the device is capable of withstanding high junction temperatures and has a low reverse current and minimal reverse recovery time.

The main working principle of the VS-10ETF02-M3 diode is that of a rectifier. This is achieved by the devices\' ability to convert alternating current (AC) to direct current (DC). The device works by blocking current flow in the reverse direction and providing a path for the majority current flow in the forward direction.

In addition, the VS-10ETF02-M3 is a great solution for applications where a low capacitance and low parasitic inductance of the device are required. It\'s fast switching times, low power losses, and low losses make it a suitable solution for applications across a variety of industries. For example, it is often used in power supplies, solar power modules, lighting systems, automotive applications, and energy harvesting.

The VS-10ETF02-M3 diode is one of the most versatile single rectifier diodes on the market, providing performance and reliability to various electronics applications. With its low reverse leakage current, high forward voltage, and low reverse recovery time, it can be used in a variety of power supply and power converting circuits.

In conclusion, the VS-10ETF02-M3 is an excellent versatile single rectifier diode, featuring low leakage current, high forward voltage, and low recovery time, making it the perfect choice for a variety of applications. With its capability to handle high junction temperatures, low losses, and fast switching times, it is the ideal choice for a variety of rectifying applications.

The specific data is subject to PDF, and the above content is for reference

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