![VS-10ETF02-M3 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | VS-10ETF02-M3-ND |
Manufacturer Part#: |
VS-10ETF02-M3 |
Price: | $ 1.45 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 10A TO220AC |
More Detail: | Diode Standard 200V 10A Through Hole TO-220AC |
DataSheet: | ![]() |
Quantity: | 1000 |
1000 +: | $ 1.30506 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 200ns |
Current - Reverse Leakage @ Vr: | 100µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -40°C ~ 150°C |
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VS-10ETF02-M3 is a kind of single rectifier diode designed for applications such as DC, pulsed, power rectifying, and active rectifying, featuring low reverse leakage current, high forward voltage and high voltage capability, and low reverse recovery time. It is suitable for various applications including power supplies, power converters, point-of-load converters and surge protection systems.
The structure of the VS-10ETF02-M3 diode consists of an aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), and gallium arsenide (GaAs) junction along with a silicon planar cap. This helps ensure that the device is capable of withstanding high junction temperatures and has a low reverse current and minimal reverse recovery time.
The main working principle of the VS-10ETF02-M3 diode is that of a rectifier. This is achieved by the devices\' ability to convert alternating current (AC) to direct current (DC). The device works by blocking current flow in the reverse direction and providing a path for the majority current flow in the forward direction.
In addition, the VS-10ETF02-M3 is a great solution for applications where a low capacitance and low parasitic inductance of the device are required. It\'s fast switching times, low power losses, and low losses make it a suitable solution for applications across a variety of industries. For example, it is often used in power supplies, solar power modules, lighting systems, automotive applications, and energy harvesting.
The VS-10ETF02-M3 diode is one of the most versatile single rectifier diodes on the market, providing performance and reliability to various electronics applications. With its low reverse leakage current, high forward voltage, and low reverse recovery time, it can be used in a variety of power supply and power converting circuits.
In conclusion, the VS-10ETF02-M3 is an excellent versatile single rectifier diode, featuring low leakage current, high forward voltage, and low recovery time, making it the perfect choice for a variety of applications. With its capability to handle high junction temperatures, low losses, and fast switching times, it is the ideal choice for a variety of rectifying applications.
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